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FM22L16

更新时间： 2024-11-20 11:59:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储
页数 文件大小 规格书
14页 403K
描述
4Mbit Asynchronous F-RAM Memory

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中文翻译

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FM22L16 数据手册

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FM22L16  
4Mbit Asynchronous F-RAM Memory  
Features  
Superior to Battery-backed SRAM Modules  
4Mbit Ferroelectric Nonvolatile RAM  
•
•
•
•
No Battery Concerns  
•
•
•
•
•
•
Organized as 256Kx16  
Monolithic Reliability  
True Surface Mount Solution, No Rework Steps  
Superior for Moisture, Shock, and Vibration  
Configurable as 512Kx8 Using /UB, /LB  
1014 Read/Write Cycles  
NoDelay™ Writes  
Page Mode Operation to 40MHz  
Advanced High-Reliability Ferroelectric Process  
Low Power Operation  
•
•
•
2.7V – 3.6V Power Supply  
Low Current Mode (5µA) using ZZ pin  
Low Active Current (8 mA typ.)  
SRAM Compatible  
•
•
JEDEC 256Kx16 SRAM Pinout  
55 ns Access Time, 110 ns Cycle Time  
Industry Standard Configuration  
•
•
Industrial Temperature -40° C to +85° C  
44-pin “Green”/RoHS TSOP-II package  
Advanced Features  
Software Programmable Block Write Protect  
•
The device is available in a 400 mil 44-pin TSOP-II  
surface mount package. Device specifications are  
guaranteed over industrial temperature range –40°C  
to +85°C.  
Description  
The FM22L16 is a 256Kx16 nonvolatile memory that  
reads and writes like  
a standard SRAM. A  
ferroelectric random access memory or F-RAM is  
nonvolatile, which means that data is retained after  
power is removed. It provides data retention for over  
10 years while eliminating the reliability concerns,  
functional disadvantages, and system design  
complexities of battery-backed SRAM (BBSRAM).  
Fast write timing and high write endurance make the  
F-RAM superior to other types of memory.  
Pin Configuration  
A5  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A4  
A3  
1
2
A6  
A7  
A2  
3
OE  
A1  
4
UB  
A0  
5
LB  
CE  
6
DQ15  
DQ14  
DQ13  
DQ12  
VSS  
VDD  
DQ11  
DQ10  
DQ9  
DQ8  
/ZZ  
DQ0  
DQ1  
DQ2  
DQ3  
VDD  
VSS  
DQ4  
DQ5  
DQ6  
DQ7  
WE  
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
In-system operation of the FM22L16 is very similar  
to other RAM devices and can be used as a drop-in  
replacement for standard SRAM. Read and write  
cycles may be triggered by /CE or simply by  
changing the address. The F-RAM memory is  
nonvolatile due to its unique ferroelectric memory  
process. These features make the FM22L16 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes in the form of an SRAM.  
A17  
A16  
A15  
A14  
A13  
A8  
A9  
A10  
A11  
A12  
The FM22L16 includes a low voltage monitor that  
blocks access to the memory array when VDD drops  
below VDD min. The memory is protected against an  
inadvertent access and data corruption under this  
condition. The device also features software-  
controlled write protection. The memory array is  
divided into 8 uniform blocks, each of which can be  
individually write protected.  
Ordering Information  
FM22L16-55-TG  
55 ns access, 44-pin  
“Green”/RoHS TSOP-II  
FM22L16-55-TGTR 55 ns access, 44-pin  
“Green”/RoHS TSOP-II,  
Tape & Reel  
This product conforms specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 3.0  
May 2010  
Page 1 of 14  
1234567...14

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