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FM220-L PDF预览

FM220-L

更新时间: 2024-02-06 13:01:34
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管光电二极管瞄准线功效
页数 文件大小 规格书
2页 75K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

FM220-L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.6其他特性:LOW LEAKAGE CURRENT, METALLURGICALLY BONDED
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
认证状态:Not Qualified最大重复峰值反向电压:20 V
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

FM220-L 数据手册

 浏览型号FM220-L的Datasheet PDF文件第2页 
Chip Schottky Barrier Diodes  
Formosa MS  
FM220-L THRU FM2100-L  
Silicon epitaxial planer type  
Features  
SMA-L  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-O Utilizing Flame  
RetardantEpoxy Molding Compound.  
0.205(5.2)  
0.189(4.8)  
0.012(0.3) Typ.  
For surface mounted applications.  
0.110(2.8)  
0.094(2.4)  
Exceeds environmental standards of MIL-S-19500 /  
228  
0.181(4.6)  
0.165(4.2)  
Low leakage current.  
0.075(1.9)  
0.067(1.7)  
0.034(0.85)  
0.024(0.60)  
0.034(0.85)  
0.024(0.60)  
Mechanical data  
Dimensions in inches and (millimeters)  
Case : Molded plastic, JEDECDO-214AC  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by c athode band  
Mounting Position : Any  
Weight : 0.0017 ounce, 0.057 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
2.0  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
50  
A
o
VR = VRRM TA = 25 C  
0.5  
10  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 125 C  
o
Thermal resistance  
Junction to ambient  
RqJA  
CJ  
75  
C / w  
pF  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
160  
o
TSTG  
-55  
+150  
C
Operating  
*1  
*2  
*3  
*4  
MARKING  
V
V
V
V
RRM  
RMS  
R
F
temperature  
SYMBOLS  
CODE  
o
( C)  
(V)  
20  
(V)  
14  
(V)  
20  
(V)  
FM220-L  
FM230-L  
FM240-L  
FM250-L  
FM260-L  
FM280-L  
FM2100-L  
SK22  
SK23  
SK24  
SK25  
SK26  
SK28  
S210  
30  
40  
21  
28  
35  
42  
56  
70  
30  
40  
0.50  
-55 to +125  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
50  
50  
0.70  
60  
60  
-55 to +150  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
80  
80  
0.85  
100  
100  

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