是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SOT-23, 3 PIN | Reach Compliance Code: | unknown |
风险等级: | 5.58 | Is Samacsys: | N |
最大精度(摄氏度): | 2 Cel | 主体宽度: | 1.3 mm |
主体高度: | 1 mm | 主体长度或直径: | 2.92 mm |
外壳: | PLASTIC | JESD-609代码: | e3 |
线性度(Cel): | 0.2 Cel | 安装特点: | SURFACE MOUNT |
端子数量: | 3 | 最大工作电流: | 0.009 mA |
最高工作温度: | 130 °C | 最低工作温度: | -55 °C |
最大输出电压: | 2.55 V | 最小输出电压: | 0.3 V |
封装主体材料: | PLASTIC/EPOXY | 封装等效代码: | TO-236 |
封装形状/形式: | RECTANGULAR | 电源: | 5 V |
传感器/换能器类型: | TEMPERATURE SENSOR,ANALOG,VOLTAGE OUTPUT | 子类别: | Other Sensors |
最大供电电压: | 6 V | 最小供电电压: | 2.4 V |
表面贴装: | YES | 技术: | CMOS |
端子面层: | Matte Tin (Sn) | 端接类型: | SOLDER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FM20S562M | HITACHI |
获取价格 |
Single Phase EMI Filter, 250V, 50HzHz, | |
FM20S562MY | HITACHI |
获取价格 |
Single Phase EMI Filter, 250V, 50HzHz, | |
FM20S562MYB | HITACHI |
获取价格 |
Single Phase EMI Filter, 250V, 50/60HzHz, | |
FM20TF-10S | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.4ohm, 6-Element, N-Channel, Silicon, Meta | |
FM2100 | RECTRON |
获取价格 |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere | |
FM2100 | FORMOSA |
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Silicon epitaxial planer type | |
FM2100A | RECTRON |
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Reverse Voltage Vr : 100 V;Forward Current Io : 2.0 A;Max Surge Current : 60 A;Forward Vol | |
FM2100A-T | RECTRON |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 | |
FM2100A-W | RECTRON |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 | |
FM2100C | RECTRON |
获取价格 |
Reverse Voltage Vr : 100 V;Forward Current Io : 2.0 A;Max Surge Current : 60 A;Forward Vol |