Datasheet > FM1808B-SG

FM1808B-SG

更新时间： 2024-09-25 10:34:35

品牌	Logo	应用领域
铁电 - RAMTRON		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
11页	94K
描述
256Kb Bytewide 5V F-RAM Memory

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中文翻译

获取价格

数据手册

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FM1808B-SG 数据手册

Preliminary

FM1808B

256Kb Bytewide 5V F-RAM Memory

Features

SRAM & EEPROM Compatible

256Kbit Ferroelectric Nonvolatile RAM

•

JEDEC 32Kx8 SRAM & EEPROM pinout

70 ns Access Time

130 ns Cycle Time

•

Organized as 32,768 x 8 bits

High Endurance 1 Trillion (10¹²) Read/Writes

38 year Data Retention (

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

@ +75°C)

Low Power Operation

•

15 mA Active Current

25 µA (typ.) Standby Current

Superior to BBSRAM Modules

•

No Battery Concerns

Monolithic Reliability

True Surface Mount Solution, No Rework Steps

Superior for Moisture, Shock, and Vibration

Resistant to Negative Voltage Undershoots

Industry Standard Configuration

•

Industrial Temperature -40°C to +85°C

28-pin “Green”/RoHS SOIC Package

Description

Pin Configuration

The FM1808B is a 256-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile but operates in other respects as a RAM.

It provides data retention for 38 years while

eliminating the reliability concerns, functional

disadvantages and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing

and high write endurance make F-RAM superior to

other types of nonvolatile memory.

A14

VDD

A13

A12

A11

A10

In-system operation of the FM1808B is very similar

to other RAM devices. Minimum read- and write-

cycle times are equal. The F-RAM memory, however,

is nonvolatile due to its unique ferroelectric memory

process. Unlike BBSRAM, the FM1808B is a truly

monolithic nonvolatile memory. It provides the same

functional benefits of a fast write without the

disadvantages associated with modules and batteries

or hybrid memory solutions.

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

Ordering Information

These capabilities make the FM1808B ideal for

nonvolatile memory applications requiring frequent

or rapid writes in a bytewide environment. The

availability of a true surface-mount package improves

the manufacturability of new designs. Device

specifications are guaranteed over an industrial

temperature range of -40°C to +85°C.

FM1808B-SG

28-pin “Green”/RoHS SOIC

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 1.2

Mar. 2011

Page 1 of 11

12 3 4 5 6 7...11

中文翻译

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与FM1808B-SG相关器件

型号	品牌	获取价格	描述	数据表
FM1808B-SGTR	CYPRESS	获取价格	暂无描述
FM1808B-SGTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM1808S150S	ETC	获取价格	NVRAM (Ferroelectric Based)
FM1808S-150S	RAMTRON	获取价格	Memory Circuit, 32KX8, CMOS, PDSO28, PLASTIC, SOP-28
FM1808S150T	ETC	获取价格	NVRAM (Ferroelectric Based)
FM1808S-150T	RAMTRON	获取价格	Memory Circuit, 32KX8, CMOS, PDSO28, PLASTIC, TSOP1-28
FM180B	RECTRON	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 80 to 100 Volts CURRENT 1.0 Ampere
FM180B-HF	RECTRON	获取价格	Rectifier Diode,
FM180B-T-HF	RECTRON	获取价格	Rectifier Diode,
FM180BV-T	RECTRON	获取价格	Rectifier Diode,

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