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FM1808-70-P PDF预览

FM1808-70-P

更新时间: 2024-02-15 17:08:25
品牌 Logo 应用领域
其他 - ETC 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
12页 92K
描述
256Kb Bytewide FRAM Memory

FM1808-70-P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP28,.4
针数:28Reach Compliance Code:unknown
HTS代码:8542.32.00.71风险等级:5.64
最长访问时间:70 nsJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:17.9 mm
内存密度:262144 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP28,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:2.65 mm最大待机电流:0.00002 A
子类别:SRAMs最大压摆率:0.025 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.5 mm
Base Number Matches:1

FM1808-70-P 数据手册

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Preliminary  
FM1808  
256Kb Bytewide FRAM Memory  
Features  
SRAM & EEPROM Compatible  
256K bit Ferroelectric Nonvolatile RAM  
·
·
·
·
JEDEC 32Kx8 SRAM & EEPROM pinout  
70 ns access time  
130 ns cycle time  
·
·
·
·
·
Organized as 32,768 x 8 bits  
High endurance 10 Billion (1010) read/writes  
10 year data retention at 85° C  
NoDelay™ write  
Equal access & cycle time for reads and writes  
Advanced high-reliability ferroelectric process  
Low Power Operation  
·
·
25 mA active current  
20 mA standby current  
Superior to BBSRAM Modules  
·
·
·
·
·
No battery concerns  
Monolithic reliability  
True surface mount solution, no rework steps  
Superior for moisture, shock, and vibration  
Resistant to negative voltage undershoots  
Industry Standard Configuration  
·
·
Industrial temperature -40° C to +85° C  
28-pin SOP or DIP  
Description  
Pin Configuration  
The FM1808 is a 256-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile but operates in other respects as a RAM.  
It provides data retention for 10 years while  
eliminating the reliability concerns, functional  
disadvantages and system design complexities of  
battery-backed SRAM. It’s fast write and high write  
endurance makes it superior to other types of  
nonvolatile memory.  
A14  
A12  
A7  
VDD  
WE  
A13  
A8  
A6  
A5  
A9  
A4  
A11  
OE  
A3  
In-system operation of the FM1808 is very similar to  
other RAM based devices. Memory read- and write-  
cycles require equal times. The FRAM memory,  
however, is nonvolatile due to its unique ferroelectric  
memory process. Unlike BBSRAM, the FM1808 is a  
truly monolithic nonvolatile memory. It provides the  
same functional benefits of a fast write without the  
serious disadvantages associated with modules and  
batteries or hybrid memory solutions.  
A2  
A10  
CE  
A1  
A0  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ0  
DQ1  
DQ2  
VSS  
These capabilities make the FM1808 ideal for  
nonvolatile memory applications requiring frequent or  
rapid writes in  
a bytewide environment. The  
availability of a true surface-mount package improves  
the manufacturability of new designs, while the DIP  
package facilitates simple design retrofits. The  
FM1808 offers guaranteed operation over an  
industrial temperature range of -40°C to +85°C.  
Ordering Information  
FM1808-70-P  
FM1808-70-S  
FM1808-120-P  
FM1808-120-S  
70 ns access, 28-pin plastic DIP  
70 ns access, 28-pin SOP  
120 ns access, 28-pin plastic DIP  
120 ns access, 28-pin SOP  
This data sheet contains design specifications for product development.  
These specifications may change in any manner without notice.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058  
www.ramtron.com  
27 July 2000  
1/12  

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