Datasheet > FM180-MH

FM180-MH

更新时间： 2024-11-18 22:37:27

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	83K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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FM180-MH 数据手册

Chip Schottky Barrier Diodes

Formosa MS

FM120-MH THRU FM1100-MH

Silicon epitaxial planer type

Features

SOD-123H

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

For surface mounted applications.

0.071(1.8)

0.055(1.4)

Exceeds environmental standards of MIL-S-19500 /

228

Low leakage current.

0.035(0.9)

0.028(0.7)

0.031(0.8) Typ.

Mechanical data

Dimensions in inches and (millimeters)

Case : Molded plastic, JEDECSOD-123H

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.0393 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

1.0

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

0.5

Reverse current

I_R

V_R= V_RRMT_A= 125 C

Thermal resistance

Junction to ambient

Rq_JA

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

120

T_STG

-55

+150

Operating

MARKING

V_RRM

V_RMS

V_R

V_F

temperature

SYMBOLS

CODE

( C)

(V)

FM120-MH

FM130-MH

FM140-MH

FM150-MH

FM160-MH

FM180-MH

FM1100-MH

100

0.50

-55 to +125

*1 Repetitive peak reverse voltage

*2 RMS voltage

0.70

-55 to +150

*3 Continuous reverse voltage

*4 Maximum forward voltage

0.85

100

中文翻译

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