5秒后页面跳转
FM180-M PDF预览

FM180-M

更新时间: 2024-11-18 22:40:55
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管光电二极管瞄准线
页数 文件大小 规格书
2页 73K
描述
Silicon epitaxial planer type

FM180-M 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:SMA, 2 PINReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.62
Is Samacsys:N其他特性:LOW POWER LOSS
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:80 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

FM180-M 数据手册

 浏览型号FM180-M的Datasheet PDF文件第2页 
Chip Schottky Barrier Diodes  
Formosa MS  
FM120-M THRU FM1100-M  
Silicon epitaxial planer type  
Features  
SOD-123  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-OUtilizing Flame  
Retardant EpoxyMolding Compound.  
0.161(4.1)  
0.146(3.7)  
0.012(0.3) Typ.  
0.071(1.8)  
0.055(1.4)  
For surface mounted applications.  
Exceeds environmental standards of MIL-S-19500 /  
228  
0.110(2.8)  
0.094(2.4)  
Low leakage current.  
0.063(1.6)  
0.055(1.4)  
0.035(0.9) Typ.  
0.035(0.9) Typ.  
Dimensions in inches and (millimeters)  
Mechanical data  
Case : Molded plastic, JEDEC SOD-123 / MINISMA  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by cathode band  
Mounting Position : Any  
Weight : 0.04 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
1.0  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
30  
A
o
VR = VRRM TA = 25 C  
0.5  
10  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 125 C  
o
Thermal resistance  
Junction to ambient  
Rq  
98  
C / w  
pF  
JA  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
CJ  
120  
o
TSTG  
-55  
+150  
C
Operating  
*1  
*2  
*3  
*4  
MARKING  
SYMBOLS  
VRRM  
VRMS  
VR  
VF  
temperature  
CODE  
o
( C)  
(V)  
(V)  
(V)  
(V)  
FM120-M  
FM130-M  
FM140-M  
FM150-M  
FM160-M  
FM180-M  
FM1100-M  
12  
13  
14  
15  
16  
18  
10  
20  
30  
40  
50  
60  
80  
100  
14  
21  
28  
35  
42  
56  
70  
20  
30  
40  
50  
60  
80  
100  
0.50  
-55 to +125  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
0.70  
-55 to +150  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
0.85  

与FM180-M相关器件

型号 品牌 获取价格 描述 数据表
FM180-MH FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM180-M-R FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM180-N FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM180-N PACELEADER

获取价格

CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER
FM180-S FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM180-T RECTRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 80V V(RRM), Silicon, DO-214AC, SMA, 2 P
FM180V-W RECTRON

获取价格

Rectifier Diode,
FM180W RECTRON

获取价格

SIGNAL DIODE
FM180-W RECTRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 80V V(RRM), Silicon, DO-214AC, SMA, 2 P
FM180W-T RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, SMX, 2 PIN