Datasheet > FM1100-M-R

FM1100-M-R

更新时间： 2024-11-19 22:07:51

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	75K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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数据手册

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FM1100-M-R 数据手册

Chip Schottky Barrier Diodes

Formosa MS

FM120-M-R THRU FM1100-M-R

Silicon epitaxial planer type

Features

SOD-123

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-OUtilizing Flame

Retardant EpoxyMolding Compound.

0.161(4.1)

0.146(3.7)

0.012(0.3) Typ.

0.071(1.8)

0.055(1.4)

For surface mounted applications.

Exceeds environmental standards of MIL-S-19500 /

228

0.126(3.2)

0.110(2.8)

Low leakage current.

0.063(1.6)

0.055(1.4)

0.035(0.9) Typ.

Dimensions in inches and (millimeters)

Mechanical data

Case : Molded plastic, JEDEC SOD-123 / MINISMA

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.04 gram

(AT T_A=25 C unless otherwise noted)

MAXIMUM RATINGS

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

1.0

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

0.1

2.0

Reverse current

I_R

V_R= V_RRMT_A= 125 C

Thermal resistance

Junction to ambient

Rq_JA

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

120

T_STG

-55

+150

Operating

MARKING

RRM

RMS

temperature

SYMBOLS

CODE

( C)

(V)

FM120-M-R

FM130-M-R

FM140-M-R

FM150-M-R

FM160-M-R

FM180-M-R

FM1100-M-R

0.50

-55 to +125

*1 Repetitive peak reverse voltage

*2 RMS voltage

0.70

-55 to +150

*3 Continuous reverse voltage

*4 Maximum forward voltage

0.85

100

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