Datasheet > FM1100-M

FM1100-M

更新时间： 2024-11-30 12:49:55

品牌	Logo	应用领域
PACELEADER		二极管光电二极管瞄准线局域网
页数	文件大小	规格书
2页	130K
描述
SILICON EPITAXIAL PLANCE TYPE

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中文翻译

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数据手册

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FM1100-M 数据手册

FM120-M thru FM1150-M

SSIILLIICCOONN EEPPIITTAAXXIIAALL PPLLAANNCCEE TTYYPPEE

SOD-123

0.154(3.9)

0.012(0.3) Typ.

0.138(3.5)

0.071(1.8)

0.055(1.4)

0.126(3.2)

0.110(2.8)

0.067(1.7)

0.051(1.3)

0.035(0.9) Typ.

Dimensions in inches and (millimeters)

FEATURES

MECHANICAL DATA

Plastic package has Underwriters Laboratory

Flammability classification 94V-0 Utilizing Fame

Retardant Epoxy Molding Compound

For surface mount applications

Case Molded plastic, SOD-123/MINI-SMA

Terminals Solder plated, solderable per

MIL-STD-750, Method 2026

Polarity Indicated by cathode band

Mounting Position Any

Exceeds environmental standards of MIL-S-19500/228

Low leakage current.

Weight 0.04grams

MAXIMUM RATINGS (at TA=25 C unless otherwise noted)

Typ.

PARAMETER

CONDITIONS

SYMBOL

Min.

Max.

1.0

UNITS

Forward rectified current

See Fig.1

8.3ms Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

Forward surge current

IFSM

0.5

VR=VRRM TA=25 C

Reverse current

VR=VRRM TA=100 C

RJA

C / W

Thermal resistance

Junction to ambient

Diode junction capacitance F=1MHz and applied 4vDC reverse voltage

Storage temperature

120

TSTG

-55

+150

Operating Temperature

VRRM

VRMS

SYMBOLS

MARKING CODE

( C)

(V)

FM120-M

FM130-M

FM140-M

FM150-M

FM160-M

FM180-M

FM1100-M

FM1150-M

115

105

0.5

-55 to + 125

0.7

-55 to + 150

0.85

100

150

100

150

0.92

*1 Repetitive peak reverse peak reverse

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage

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