5秒后页面跳转
FM1100-L PDF预览

FM1100-L

更新时间: 2024-09-18 22:40:55
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管光电二极管瞄准线
页数 文件大小 规格书
2页 74K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

FM1100-L 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-F2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.06
Is Samacsys:N其他特性:LOW POWER LOSS
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUALBase Number Matches:1

FM1100-L 数据手册

 浏览型号FM1100-L的Datasheet PDF文件第2页 
Chip Schottky Barrier Diodes  
Formosa MS  
FM120-L THRU FM1100-L  
Silicon epitaxial planer type  
Features  
SMA-L  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-O Utilizing Flame  
RetardantEpoxy Molding Compound.  
0.205(5.2)  
0.189(4.8)  
0.012(0.3) Typ.  
For surface mounted applications.  
0.110(2.8)  
0.094(2.4)  
Exceeds environmental standards of MIL-S-19500 /  
228  
0.181(4.6)  
0.165(4.2)  
Low leakage current.  
0.075(1.9)  
0.067(1.7)  
0.040(1.0) Typ.  
0.040 (1.0) Typ.  
Mechanical data  
Dimensions in inches and (millimeters)  
Case : Molded plastic, JEDECDO-214AC  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by c athode band  
Mounting Position : Any  
Weight : 0.0015 ounce, 0.05 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
1.0  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
30  
A
o
VR = VRRM TA = 25 C  
0.5  
10  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 125 C  
o
Thermal resistance  
Junction to ambient  
RqJA  
CJ  
88  
C / w  
pF  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
120  
o
TSTG  
-55  
+150  
C
Operating  
*1  
*2  
*3  
*4  
MARKING  
V
V
V
V
RRM  
RMS  
R
F
temperature  
SYMBOLS  
CODE  
o
( C)  
(V)  
20  
(V)  
14  
(V)  
20  
(V)  
FM120  
FM130  
FM140  
FM150  
FM160  
FM180  
FM1100  
SS12  
SS13  
SS14  
SS15  
SS16  
SS18  
S110  
30  
40  
21  
28  
35  
42  
56  
70  
30  
40  
0.50  
-55 to +125  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
50  
50  
0.70  
60  
60  
-55 to +150  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
80  
80  
0.85  
100  
100  

与FM1100-L相关器件

型号 品牌 获取价格 描述 数据表
FM1100-LN FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM1100L-T RECTRON

获取价格

Rectifier Diode,
FM1100L-W RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, S
FM1100-M FORMOSA

获取价格

Silicon epitaxial planer type
FM1100-M PACELEADER

获取价格

SILICON EPITAXIAL PLANCE TYPE
FM1100-MH FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM1100-M-R FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM1100-N FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM1100-N PACELEADER

获取价格

CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER
FM1100-S FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type