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FM1100 PDF预览

FM1100

更新时间: 2024-12-01 17:32:35
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
2页 30K
描述
Reverse Voltage Vr : 100 V;Forward Current Io : 1.0 A;Max Surge Current : 40 A;Forward Voltage Vf : 0.85 V;Reverse Current Ir : 2.0 uA;Recovery Time : N/A;Package / Case : DO-214AC(SMA);Mounting Style : SMD/SMT;Certified (AEC-Q101...etc) : AEC-Q101

FM1100 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:4.01
其他特性:HIGH RELIABILITY, METALLURGICALLY BONDED, LOW NOISE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.77 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
最大非重复峰值正向电流:40 A元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

FM1100 数据手册

 浏览型号FM1100的Datasheet PDF文件第2页 
FM120  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
FM1100  
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere  
FEATURES  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.09 gram  
DO-214AC  
MECHANICAL DATA  
* Epoxy: Device has UL flammability classification 94V-O  
(
)
0.067 1.70  
(
)
)
0.110 2.79  
(
)
0.051 1.29  
(
0.086 2.18  
(
)
0.180 4.57  
(
)
0.160 4.06  
(
)
0.012 0.305  
(
)
0.006 0.152  
(
)
0.091 2.31  
(
)
)
0.067 1.70  
(
0.059 1.50  
(
)
)
0.008 0.203  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
)
0.035 0.89  
(
0.004 0.102  
(
)
)
0.209 5.31  
(
0.185 4.70  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
FMB120 FMB130 FMB140 FMB150 FMB160 FMB180 FMB1100 UNITS  
V
V
RRM  
RMS  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
DC  
O
100  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
at Derating Lead Temperature  
I
1.0  
40  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Amps  
Typical Thermal Resistance (Note 1)  
Typical Junction Capacitance (Note 2)  
Operating Temperature Range  
Rθ JA  
50  
0C/W  
pF  
0 C  
CJ  
J
110  
T
-65 to + 125  
-65 to + 150  
Storage Temperature Range  
T
STG  
-65 to + 150  
0 C  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
FMB1100  
CHARACTERISTICS  
SYMBOL  
FMB120 FMB130 FMB140 FMB150 FMB160 FMB180  
.55 .70  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 1.0A DC  
.85  
V
F
Maximum Average Reverse Current  
@T  
A
A
= 25oC  
= 100oC  
1.0  
10  
mAmps  
mAmps  
I
R
at Rated DC Blocking Voltage  
@T  
NOTES : 1. Thermal Resistance (Junction to Ambient).  
2001-5  
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
3. P.C.B Monuted with 0.2X0.2” (5.0X5.0mm2) copper pad area.  

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