Datasheet > FM1020-T

FM1020-T

更新时间： 2024-09-17 22:31:59

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管
页数	文件大小	规格书
2页	81K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

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中文翻译

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技术参数
数据手册

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FM1020-T 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

FM1020-T 数据手册

Chip Schottky Barrier Diodes

Formosa MS

FM1020-T THRU FM1040-T

Silicon epitaxial planer type

Features

SMC-T

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.276(7.0)

0.260(6.6)

0.012(0.3) Typ.

For surface mounted applications.

0.152(3.8)

0.189(4.8)

0.173(4.4)

0.144(3.6)

Exceeds environmental standards of MIL-S-19500 /

228

0.244(6.2)

0.228(5.8)

Low leakage current.

0.087(2.2)

0.071(1.8)

0.032(0.8) Typ.

0.040(1.0) Typ.

0.040 (1.0) Typ.

Mechanical data

Dimensions in inches and (millimeters)

Case : Molded plastic, JEDECDO-214AB

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by c athode band

Mounting Position : Any

Weight : 0.00585 ounce, 0.195 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

10.0

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

150

I_FSM

V_R= V_RRMT_A= 25 C

1.0

Reverse current

I_R

V_R= V_RRMT_A= 100 C

Thermal resistance

Junction to ambient

C / w

Rq_JA

C_J

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

700

-55

+150

T_STG

Operating

V_RRM

V_RMS

V_R

V_F

MARKING

temperature

SYMBOLS

CODE

( C)

*1 Repetitive peak reverse voltage

*2 RMS voltage

(V)

FM1020-T

FM1030-T

FM1040-T

SS102

SS103

SS104

0.55

-55 to +125

*3 Continuous reverse voltage

*4 Maximum forward voltage

中文翻译

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