Datasheet > FLM7179-4F

FLM7179-4F

更新时间： 2024-10-29 10:34:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	251K
描述
C-Band Internally Matched FET

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FLM7179-4F 数据手册

FLM7179-4F

C-Band Internally Matched FET

FEATURES

• High Output Power: P

= 36.5dBm (Typ.)

1dB

• High Gain: G

= 9.0dB (Typ.)

1dB

= 35% (Typ.)

• High PAE: η

• Low IM = -46dBc@Po = 25.5dBm

add

• Broad Band: 7.1 ~ 7.9GHz

• Impedance Matched Zin/Zout = 50Ω

• Hermetically Sealed Package

DESCRIPTION

The FLM7179-4F is a power GaAs FET that is internally matched for

standard communication bands to provide optimum power and gain in a

50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Unit

Rating

Drain-Source Voltage

Gate-Source Voltage

-5

T = 25°C

Total Power Dissipation

Storage Temperature

Channel Temperature

25.0

-65 to +175

175

°C

stg

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with

gate resistance of 100Ω.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limit

Typ.

Item

Symbol

Test Conditions

Unit

Min.

Max.

= 5V, V

= 0V

Saturated Drain Current

Transconductance

1700 2600

DSS

= 5V, I

= 1100mA

= 85mA

1700

Pinch-off Voltage

= 5V, I

-0.5

-5.0

-1.5 -3.0

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Drain Current

= -85µA

GSO

1dB

35.5 36.5

dBm

=10V,

8.0

9.0

1dB

= 0.65 I

DSS (Typ.),

1100 1300

dsr

f = 7.1 ~ 7.9 GHz,

Power-added Efficiency

add

Z =Z = 50 ohm

Gain Flatness

∆G

0.6

f = 7.9 GHz, ∆f = 10 MHz

3rd Order Intermodulation

Distortion

2-Tone Test

-44

-46

dBc

= 25.5dBm S.C.L.

out

Thermal Resistance

Channel to Case

5.0

6.0

°C/W

°C

∆T

Channel Temperature Rise

10V x I

x R

dsr

CASE STYLE: IB

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

Edition 1.2

September 1999

12 3 4

中文翻译

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