Datasheet > FKV550N

FKV550N

更新时间： 2024-11-30 17:15:47

品牌	Logo	应用领域
三垦 - SANKEN		开关
页数	文件大小	规格书
8页	381K
描述
三垦电气的功率MOSFET通过降低导通电阻损耗和开关损耗，有助于提高开关电路效率。

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中文翻译

获取价格

数据手册

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FKV550N 数据手册

50V / 50A High Current Low R_DS(ON)

N ch Trench Power MOSFET

FKV550N

Features

Package

TO220F-3L

 V_DS--------------------------------------------------------50 V

 I_D----------------------------------------------------------50 A

 R_DS(ON)---------------12 mΩ typ.(V_GS= 10 V, I_D= 25 A)

 Built-in Gate protection diode

 100% UIL tested

 RoHS Compliant

Applications

 DC-DC Converters

 Syncronous Rectification

(1) (2) (3)

Not to scale

D S

Equivalent circuit

D(2)

G(1)

S(3)

Absolute Maximum Ratings

 Unless otherwise specified, T_A= 25 °C

Rating

Characteristic

Symbol

Test conditions

Unit

FKV550N

Drain to Source Voltage

Gate to Source Voltage

Continuous Drain Current

V_DSS

V_GSS

I_D(DC)

± 20

PW ≤ 100 µs

Duty cycle ≤1 %

Pulsed Drain Current

I_D(PULSE)

P_D

E_AS

I_AS

± 150

T_C= 25 °C

Maximum Power Dissipation

V_DD= 20 V, I_LP= 50A

unclamped, R_g= 50 Ω

L =72μH See Figure 1

Single Pulse Avalanche Energy

Maximum avalanche current

Thermal Resistance

150

°C/W

°C

3.57

62.5

150

θ_ｃｈ

-C

θ_ｃｈ

-A

Operating Junction Temperature

Storage Temperature

T_ｃｈ

T_stg

− 55 to 150

°C

FKV550N-DS Rev.2.0

Oct. 31 2014

SANKEN ELECTRIC CO.,LTD.

12 3 4 5 6 7 8

中文翻译

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