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FKPF2N80 PDF预览

FKPF2N80

更新时间: 2024-11-18 22:31:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 栅极触发装置三端双向交流开关电子局域网
页数 文件大小 规格书
7页 137K
描述
Application Explanation(Switching mode power supply, light dimmer, electric flasher unit, hair drier)

FKPF2N80 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.74
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE换向电压的临界上升率-最小值:5 V/us
最大直流栅极触发电流:10 mA最大直流栅极触发电压:1.5 V
最大维持电流:10 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大漏电流:0.02 mA元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大均方根通态电流:2 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
触发设备类型:TRIACBase Number Matches:1

FKPF2N80 数据手册

 浏览型号FKPF2N80的Datasheet PDF文件第2页浏览型号FKPF2N80的Datasheet PDF文件第3页浏览型号FKPF2N80的Datasheet PDF文件第4页浏览型号FKPF2N80的Datasheet PDF文件第5页浏览型号FKPF2N80的Datasheet PDF文件第6页浏览型号FKPF2N80的Datasheet PDF文件第7页 
FKPF2N80  
Application Explanation  
Switching mode power supply, light dimmer, electric flasher unit, hair drier  
TV sets, stereo, refrigerator, washing machine  
Electric blanket, solenoid driver, small motor control  
Photo copier, electric tool  
2
1
1: T1  
2: T2  
3: Gate  
3
TO-220F  
1
2 3  
Bi-Directional Triode Thyristor Planar Silicon  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Rating  
Units  
(Note1 )  
V
Repetitive Peak Off-State Voltage  
800  
V
DRM  
Symbol  
Parameter  
Conditions  
Rating  
Units  
I
RMS On-State Current  
Commercial frequency, sine full wave 360°  
2
A
T (RMS)  
conduction, T =115°C  
C
I
Surge On-State Current  
Sinewave 1 full cycle, peak value,  
50Hz  
60Hz  
9
10  
0.4  
A
A
A s  
TSM  
2
non-repetitive  
2
2
I t  
I t for Fusing  
Value corresponding to 1 cycle of halfwave,  
surge on-state current, tp=10ms  
di/dt  
Critical Rate of Rise of On-State Current  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Voltage  
I
= 2x I , tr 100ns  
50  
3
0.3  
A/µs  
W
W
V
G
GT  
P
P
V
GM  
G (AV)  
GM  
10  
I
Peak Gate Current  
1.6  
A
GM  
T
T
V
Junction Temperature  
Storage Temperature  
Isolation Voltage  
- 40 ~ 125  
- 40 ~ 125  
1500  
°C  
°C  
V
J
STG  
Ta=25°C, AC 1 minute, T T G terminal to  
1 2  
case  
iso  
Thermal Characteristic  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
(Note 4)  
R
Thermal Resistance  
Junction to case  
-
-
4.5  
°C/W  
th(J-A)  
©2004 Fairchild Semiconductor Corporation  
Rev. B1, April 2004  

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