Datasheet > FKI10126

FKI10126

更新时间： 2024-11-22 01:21:27

品牌	Logo	应用领域
三垦 - SANKEN		/
页数	文件大小	规格书
6页	266K
描述
N ch Trench Power MOSFET

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中文翻译

获取价格

数据手册

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FKI10126 数据手册

100 V, 41 A, 8.8 mΩ Low RDS(ON)

N ch Trench Power MOSFET

FKI10126

Features

Package

 V_(BR)DSS--------------------------------100 V (I_D= 100 µA)

 I_D----------------------------------------------------------41 A

 R_DS(ON)-------- 12.1 mΩ max. (V_GS= 10 V, I_D= 33.0 A)

 Q_g------ 45.2nC (V_GS= 4.5 V, V_DS= 50 V, I_D= 33.0 A)

TO-220F

 Low Total Gate Charge

 High Speed Switching

 Low On-Resistance

 Capable of 4.5 V Gate Drive

 100 % UIL Tested

(1) (2) (3)

Not to scale

 RoHS Compliant

Applications

 DC-DC converters

 Synchronous Rectification

 Power Supplies

Equivalent circuit

D(2)

S(3)

G(1)

Absolute Maximum Ratings

 Unless otherwise specified, T_A= 25 °C

Parameter

Drain to Source Voltage

Gate to Source Voltage

Continuous Drain Current

Symbol

V_DS

Test conditions

Rating

100

Unit

V_GS

± 20

T_C= 25 °C

I_D

PW ≤ 100µs

Duty cycle ≤ 1 %

Pulsed Drain Current

I_DM

I_S

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

PW ≤ 100µs

Duty cycle ≤ 1 %

I_SM

V_DD= 50 V, L = 1 mH,

I_AS= 13 A, unclamped,

R_G= 4.7 Ω

Single Pulse Avalanche Energy

E_AS

170

Refer to Figure 1

Avalanche Current

I_AS

P_D

T_C= 25 °C

Power Dissipation

°C

Operating Junction Temperature

Storage Temperature Range

T_J

150

T_STG

− 55 to 150

FKI10126-DS Rev.1.2

Jan. 24, 2014

SANKEN ELECTRIC CO.,LTD.

http://www.sanken-ele.co.jp

12 3 4 5 6

中文翻译

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