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FKG1020 PDF预览

FKG1020

更新时间: 2024-11-26 01:19:03
品牌 Logo 应用领域
三垦 - SANKEN /
页数 文件大小 规格书
8页 800K
描述
100V, 20A Low RDS(ON)N ch Trench Power MOSFET

FKG1020 数据手册

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100V, 20A Low RDS(ON)  
N ch Trench Power MOSFET  
EKG1020, FKG1020  
Data Sheet  
Features  
Package  
VDS ------------------------------------------------------ 100 V  
ID ----------------------------------------------------------20 A  
RDS(ON) ---------------33 mΩ typ.(VGS = 10 V, ID = 10 A)  
Built-in Gate protect diode  
EKG1020  
TO220-3L  
FKG1020  
TO220F-3L  
(4)  
100 % UIL tested  
RoHS Compliant  
Applications  
Low Voltage DC Motor driver  
Solenoid driver  
(1) (2) (3)  
(1) (2) (3)  
G
D
S
G D S  
Not to scale  
D(2)(4)  
G(1)  
S(3)  
Absolute Maximum Ratings  
Unless otherwise specified, TA = 25 °C  
Rating  
Characteristic  
Symbol  
Test conditions  
Unit  
EKG1020  
FKG1020  
Drain to Source Voltage  
Gate to Source Voltage  
Continuous Drain Current  
VDSS  
VGSS  
ID(DC)  
100  
± 20  
20  
V
V
A
PW ≤ 100 µs  
Duty cycle ≤1 %  
Pulsed Drain Current  
ID(PULSE)  
ISD(DC)  
60  
20  
60  
A
A
A
Continuous Diode Forward Current  
Diode Pulse Current  
PW ≤ 100 µs  
Duty cycle ≤ 1 %  
ISD(PULSE)  
VDD = 20 V, L = 200 µH,  
ILP = 20 A, unclamped,  
Rg = 50 Ω, See Figure 1  
Single Pulse Avalanche Energy  
EAS  
50  
20  
mJ  
Maximum avalanche current  
Maximum Power Dissipation  
IAS  
PD  
A
W
TC = 25 °C  
55  
40  
θj-C  
θj-A  
Tj  
2.27  
3.13  
°C/W  
°C/W  
°C  
Thermal Resistance  
62.5  
150  
Operating Junction Temperature  
Storage Temperature  
Tstg  
55 to 150  
°C  
EKG1020, FKG1020-DSE Rev.1.1  
May 10, 2018  
SANKEN ELCTRIC CO., LTD.  
http://www.sanken-ele.co.jp/en  
1
© SANKEN ELECTRIC CO., LTD. 2013  

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