Datasheet > FKG1020

FKG1020

更新时间： 2024-11-06 01:19:03

品牌	Logo	应用领域
三垦 - SANKEN		/
页数	文件大小	规格书
8页	800K
描述
100V, 20A Low RDS(ON)N ch Trench Power MOSFET

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FKG1020 数据手册

100V, 20A Low R_DS(ON)

N ch Trench Power MOSFET

EKG1020, FKG1020

Data Sheet

Features

Package

● V_DS------------------------------------------------------ 100 V

● I_D----------------------------------------------------------20 A

● R_DS(ON)---------------33 mΩ typ.(V_GS= 10 V, I_D= 10 A)

● Built-in Gate protect diode

EKG1020

TO220-3L

FKG1020

TO220F-3L

(4)

● 100 % UIL tested

● RoHS Compliant

Applications

● Low Voltage DC Motor driver

● Solenoid driver

(1) (2) (3)

G D S

Not to scale

D(2)(4)

G(1)

S(3)

Absolute Maximum Ratings

● Unless otherwise specified, T_A= 25 °C

Rating

Characteristic

Symbol

Test conditions

Unit

EKG1020

FKG1020

Drain to Source Voltage

Gate to Source Voltage

Continuous Drain Current

V_DSS

V_GSS

I_D(DC)

100

± 20

PW ≤ 100 µs

Duty cycle ≤1 %

Pulsed Drain Current

I_D(PULSE)

I_SD(DC)

Continuous Diode Forward Current

Diode Pulse Current

PW ≤ 100 µs

Duty cycle ≤ 1 %

I_SD(PULSE)

V_DD= 20 V, L = 200 µH,

I_LP= 20 A, unclamped,

R_g= 50 Ω, See Figure 1

Single Pulse Avalanche Energy

E_AS

Maximum avalanche current

Maximum Power Dissipation

I_AS

P_D

T_C= 25 °C

θ_j-C

θ_j-A

T_j

2.27

3.13

°C/W

°C

Thermal Resistance

62.5

150

Operating Junction Temperature

Storage Temperature

T_stg

− 55 to 150

°C

EKG1020, FKG1020-DSE Rev.1.1

May 10, 2018

SANKEN ELCTRIC CO., LTD.

http://www.sanken-ele.co.jp/en

12 3 4 5 6 7 8

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