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FJX3014RTF PDF预览

FJX3014RTF

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 176K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

FJX3014RTF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.5
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):68JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

FJX3014RTF 数据手册

 浏览型号FJX3014RTF的Datasheet PDF文件第2页浏览型号FJX3014RTF的Datasheet PDF文件第3页浏览型号FJX3014RTF的Datasheet PDF文件第4页浏览型号FJX3014RTF的Datasheet PDF文件第5页 
November 2013  
FJX3014R  
NPN Epitaxial Silicon Transistor with Bias Resistor  
Features  
Description  
• 100 mA Output Current Capability  
• Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 47 kΩ)  
Transistors with built-in resistors can be excellent  
space- and cost-saving solutions by reducing compo-  
nent count and simplifying circuit design.  
Application  
• Switching, Interface, and Driver Circuits  
• Inverters  
• Digital Applications in Industrial Segments  
Equivalent Circuit  
C
3
R1  
B
2
R2  
1
SOT-323  
1. Base 2. Emitter 3. Collector  
E
Ordering Information  
Part Number  
Top Mark  
Package  
Packing Method  
Tape and Reel  
FJX3014RTF  
S14  
SC70 3L (SOT-323)  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
50  
50  
V
10  
V
100  
mA  
°C  
°C  
TJ  
Junction Temperature  
Storage Temperature  
150  
TSTG  
-55 to +150  
© 2002 Fairchild Semiconductor Corporation  
FJX3014R Rev. 1.1.2  
www.fairchildsemi.com  
1

FJX3014RTF 替代型号

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