5秒后页面跳转
FJN3305RTA PDF预览

FJN3305RTA

更新时间: 2024-09-20 19:50:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 159K
描述
NPN Epitaxial Silicon Transistor with Bias Resistor, 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM, 2000/AMMO

FJN3305RTA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.39
其他特性:BUILT IN BIAS RESISTOR RATIO IS 2.13最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

FJN3305RTA 数据手册

 浏览型号FJN3305RTA的Datasheet PDF文件第2页浏览型号FJN3305RTA的Datasheet PDF文件第3页浏览型号FJN3305RTA的Datasheet PDF文件第4页浏览型号FJN3305RTA的Datasheet PDF文件第5页 
November 2013  
FJN3305R  
NPN Epitaxial Silicon Transistor with Bias Resistor  
Features  
Description  
• 100 mA Output Current Capability  
• Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 10 kΩ)  
Transistors with built-in resistors can be excellent  
space- and cost-saving solutions by reducing compo-  
nent count and simplifying circuit design.  
Application  
• Switching, Interface, and Driver Circuits  
• Inverters  
• Digital Applications in Industrial Segments  
Equivalent Circuit  
C
R1  
B
R2  
TO-92  
1
1. Emitter 2. Collector 3. Base  
E
Ordering Information  
Part Number  
Top Mark  
Package  
Packing Method  
FJN3305RTA  
R3305  
TO-92 3L  
Ammo  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
50  
50  
V
10  
V
100  
mA  
°C  
°C  
TJ  
Junction Temperature  
Storage Temperature  
150  
TSTG  
-55 to +150  
© 2002 Fairchild Semiconductor Corporation  
FJN3305R Rev. 1.1.2  
www.fairchildsemi.com  
1

FJN3305RTA 替代型号

型号 品牌 替代类型 描述 数据表
FJN3305RTA ONSEMI

功能相似

NPN 外延硅晶体管,带偏置电阻
FJN3305RBU ONSEMI

功能相似

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

与FJN3305RTA相关器件

型号 品牌 获取价格 描述 数据表
FJN3306R FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
FJN3306RBU FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
FJN3307R FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
FJN3308R FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
FJN3308RBU FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
FJN3308RTA FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
FJN3309R FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
FJN3309RTA ROCHESTER

获取价格

100mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN
FJN3310R FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
FJN3310RBU FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,