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FJN3303TA PDF预览

FJN3303TA

更新时间: 2024-11-08 21:20:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
6页 62K
描述
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-92, 3 PIN

FJN3303TA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:LEAD FREE, TO-92, 3 PIN针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.37最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):1.1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

FJN3303TA 数据手册

 浏览型号FJN3303TA的Datasheet PDF文件第2页浏览型号FJN3303TA的Datasheet PDF文件第3页浏览型号FJN3303TA的Datasheet PDF文件第4页浏览型号FJN3303TA的Datasheet PDF文件第5页浏览型号FJN3303TA的Datasheet PDF文件第6页 
January 2005  
FJN3303  
NPN Silicon Transistor Planar Silicon Transistor  
High Voltage Switch Mode Application  
High Speed Switching  
Suitable for Electronic Ballast and Charger  
TO-92  
1
1. Emitter 2. Collector 3.Base  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
700  
Units  
V
V
V
Collector-Base Voltage  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse) *  
Base Current (DC)  
400  
9
V
I
I
I
I
1.5  
A
C
3
A
CP  
B
0.75  
1.5  
A
Base Current (Pulse) *  
A
BP  
P
Collector Power Dissipation (T = 25°C)  
1.1  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
-65 ~ 150  
STG  
* Pulse Test: Pulse Width = 5ms, Duty Cycle 10%  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Conditions  
Min. Typ. Max Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 500µA, I = 0  
700  
400  
9
V
V
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= 5mA, I = 0  
B
= 500µA, I = 0  
V
C
I
I
V
V
= 700V, I = 0  
10  
10  
23  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
= 9V, I = 0  
C
h
h
DC Current Gain  
V
V
= 2V, I = 0.5A  
14  
5
FE1  
FE2  
CE  
CE  
C
= 2V, I = 1.0A  
C
V
Collector-Emitter Saturation Voltage  
I
I
I
= 0.5A, I = 0.1A  
0.5  
1.0  
3.0  
V
V
V
CE(sat)  
C
C
C
B
= 1.0A, I = 0.25A  
B
= 1.5A, I = 0.5A  
B
V
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
I
= 0.5A, I = 0.1A  
1.0  
1.2  
V
V
BE(sat)  
C
C
B
= 1.0A, I = 0.25A  
B
f
V
= 10V, I = 0.1A  
4
MHz  
T
CE  
C
©2005 Fairchild Semiconductor Corporation  
FJN3303 Rev. C  
1
www.fairchildsemi.com  

FJN3303TA 替代型号

型号 品牌 替代类型 描述 数据表
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