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FIR5N60BLG PDF预览

FIR5N60BLG

更新时间: 2024-11-21 00:31:19
品牌 Logo 应用领域
福斯特 - FIRST /
页数 文件大小 规格书
9页 2945K
描述
600V N-Channel MOSFET

FIR5N60BLG 数据手册

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FIR5N60BPG/LG  
600V N-Channel MOSFET  
Features:  
PIN Connection TO-251/252  
Low Intrinsic Capacitances.  
Excellent Switching Characteristics.  
Extended Safe Operating Area.  
Unrivalled Gate Charge :Qg=13.3nC (Typ.).  
BVDSS=600V,ID=4.5 A  
TO251  
TO252  
RDS(on) : 2.5 (Max) @VG=10V  
100% Avalanche Tested  
Marking Diagram  
YAWW  
Y
A
= Year  
YAWW  
FIR5N60BP  
= Assembly Location  
FIR5N60L  
WW  
= Work Week  
= Specific Device Code  
FIR5N60BP/L  
Value  
Unit  
600  
4.5  
V
Tj=25  
A
Tj=100℃  
2.5  
shold Voltage  
±30  
212  
V
ngle Pulse Avalanche Energy (note1)  
mJ  
PD  
Tj  
Avalanche Current (note2)  
Power Dissipation (Tj=25)  
Junction Temperature(Max)  
Storage Temperature  
4
A
50  
W
150  
Tstg  
-55~+150  
Maximum lead temperature for soldering purpose,1/8” from  
case for 5 seconds  
TL  
300  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
2.5  
Unit  
/W  
/W  
RθJC  
RθJA  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
-
-
110  
REV:1.0  
Page 1/9  
@ 2018 Copyright By American First Semiconductor  

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