Datasheet > FIR5N50BPG

FIR5N50BPG

更新时间： 2024-11-25 01:17:59

品牌	Logo	应用领域
福斯特 - FIRST		/
页数	文件大小	规格书
11页	5638K
描述
600V N-Channel MOSFET

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数据手册

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FIR5N50BPG 数据手册

FIR5N50BPG/LG

600V N-Channel MOSFET

PIN Connection TO-251/252

：

General Description

FIR5N

50BPG,LG the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-251

TO‐251

TO‐252

Schematic dia ram

TO-252,

which accords with the RoHS standard.

：

Features

l Fast Switching

l Low ON Resistance^(Rdson≤1.5

)

Ω

l Low Gate Charge (Typical Data: 12.6nC)

l Low Reverse transfer capacitances(Typical:4pF)

l 100% Single Pulse avalanche energy Test

Marking Diagram

YAWW

= Year

YAWW

FIR5N50BP

= Assembly Location

= Work Week

FIR5N50L

= Specific Device Code

FIR5N50BP/L

：

Applications

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

500

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

3.1

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

250

V/ns

E_AS

5.0

dv/dt

0.60

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

REV:1.0

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