Datasheet > FIR4N90FG

FIR4N90FG

更新时间： 2024-11-21 00:31:19

品牌	Logo	应用领域
福斯特 - FIRST		/
页数	文件大小	规格书
8页	2089K
描述
900V N-Channel MOSFET-T

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中文翻译

获取价格

数据手册

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FIR4N90FG 数据手册

FIR4N90FG

PIN Connection TO-220F

900V N-Channel MOSFET-T

Features:

□ Low Intrinsic Capacitances.

□ Excellent Switching Characteristics.

□ Extended Safe Operating Area.

□ Unrivalled Gate Charge :Qg=17nC (Typ.).

□ BVDSS=900V,I_D=4A

□ R_DS(on) : 3.4 Ω (Max) @V_G=10V

□ 100% Avalanche Tested

Schematic dia ram

Marking Diagram

= Year

= Assembly Location

= Work Week

YAWW

FIR4N90F

= Specific Device Code

FIR4N90F

Absolute Maximum Ratings ^(Ta^{=25℃ unless otherwise noted)}

Symbol

Parameter

Value

900

4.0

Unit

V_DSS

Drain-Source Voltage

Drain Current

T_j=25℃

T_j=100℃

I_D

2.3

V_GS(TH)

E_AS

Gate Threshold Voltage

±30

570

Single Pulse Avalanche Energy (note1)

I_AR

P_D

T_j

Avalanche Current (note2)

Power Dissipation (Tj=25℃)

Junction Temperature(Max)

Storage Temperature

℃

150

T_stg

-55~+150

Maximum lead temperature for soldering purpose,1/8” from

case for 5 seconds

300

℃

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

2.5

Unit

℃/W

R_θJC

R_θJA

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

120

REV:1.0

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@ 2018 Copyright By American First Semiconductor

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