Datasheet > FIR4N70BLG

FIR4N70BLG

更新时间： 2024-10-15 01:21:59

品牌	Logo	应用领域
福斯特 - FIRST		/
页数	文件大小	规格书
11页	6839K
描述
700V N-Channel MOSFET

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中文翻译

获取价格

数据手册

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FIR4N70BLG 数据手册

FIR4N70BPG/LG

PIN Connection TO-251/252

700V N-Channel MOSFET

General Description

the silicon N-channel Enhanced

FIR

4N70BPG,LG

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-251,

which accords with the RoHS standard.

TO‐251

TO‐252

Schematic dia ram

Features

）：

l Fast Switching

l Low ON Resistance^(Rdson≤3.0

)

Ω

Marking Diagram

l Low Gate Charge (Typical Data:12.7nC)

l Low Reverse transfer capacitances(Typical:2

l 100% Single Pulse avalanche energy Test

.7pF)

YAWW

= Year

YAWW

FIR4N70BP

= Assembly Location

= Work Week

FIR4N70L

= Specific Device Code

FIR4N70BP/L

：

Applications

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

700

I_D

2.5

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

196

V/ns

E_AS

5.0

dv/dt

P_D

Derating Factor above 25°C

0.6

150，–55 to 150

300

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

T_L

℃

REV:1.0

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