Datasheet > FIR2N90BPG

FIR2N90BPG

更新时间： 2024-10-15 01:21:59

品牌	Logo	应用领域
福斯特 - FIRST		/
页数	文件大小	规格书
9页	3352K
描述
900V N-Channel MOSFET

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中文翻译

获取价格

数据手册

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FIR2N90BPG 数据手册

FIR2N90BPG,LG

900V N-Channel MOSFET

Features:

PIN Connection TO-251/252

□ Low Intrinsic Capacitances.

□ Excellent Switching Characteristics.

□ Extended Safe Operating Area.

□ Unrivalled Gate Charge :Qg=12nC (Typ.).

□ BVDSS=900V,I_D=2A

TO‐251

TO‐252

□ R_DS(on) : 7.2Ω (Max) @V_G=10V

□ 100% Avalanche Tested

Schematic dia ram

Marking Diagram

YAWW

= Year

YAWW

FIR2N90BP

= Assembly Location

FIR2N90L

= Work Week

= Specific Device Code

FIR2N90BP/L

Absolute Maximum Ratings ^(Ta^{=25℃ unless otherwise noted)}

Symbol

Parameter

Value

Unit

V_DSS

Drain-Source Voltage

Drain Current

900

2.0

T_j=25℃

I_D

T_j=100℃

1.25

±30

180

V_GS(TH)

E_AS

Gate Threshold Voltage

Single Pulse Avalanche Energy (note1)

I_AR

P_D

T_j

Avalanche Current (note2)

Power Dissipation (Tj=25℃)

Junction Temperature(Max)

Storage Temperature

2.0

℃

150

T_stg

-55~+150

Maximum lead temperature for soldering purpose,1/8” from

case for 5 seconds

300

℃

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Unit

℃/W

R_θJC

R_θJA

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

110

REV:1.0

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@ 2018 Copyright By American First Semiconductor

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