Datasheet > FIR11NS65ABPG

FIR11NS65ABPG

更新时间： 2024-10-15 01:17:59

品牌	Logo	应用领域
福斯特 - FIRST		/
页数	文件大小	规格书
8页	1717K
描述
N - Channel Super Junction Power MOSFET-A

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中文翻译

获取价格

数据手册

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FIR11NS65ABPG 数据手册

FIR11NS65ABPG,FIR11NS65ALG

N - Channel Super Junction Power MOSFET-A

PIN Connection

V_DS

650

290

11.5

mΩ

R_DS(ON)TYP

I_D

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

TO-251

TO-252

Features

● New technology for high voltage device

● Low on-resistance and low conduction losses

● Small package

Schematic diagram

● Ultra Low Gate Charge cause lower driving requirements

● 100% Avalanche Tested

● ROHS compliant

YAWWA

FIR11NS65ABP

FIR11NS65AL

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

= Year

= Assembly Location

= Work Week

= Version

= Specific Device Code

FIR11NS65ABP/AL

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

V^DS

Value

650

±30

11.5

Unit

Drain-Source Voltage (V^GS=0V）

Gate-Source Voltage (V^DS=0V) AC (f>1 Hz)

Continuous Drain Current at T_C=25°C

Continuous Drain Current at T_C=100°C

V^GS

I_{D (DC)}

I_{DM (pluse)}

P_D

(Note 1)

Pulsed drain current

Maximum Power Dissipation(T_C=25℃)

101

0.97

144

Derate above 25°C

W/°C

(Note2)

E^AS

I_AR

Single pulse avalanche energy

(Note 1)

Avalanche current

Repetitive Avalanche energy ,t_ARlimited by T_jmax

(Note 1)

0.5

E_AR

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