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FMS2020-001-EB PDF预览

FMS2020-001-EB

更新时间: 2024-01-13 00:27:03
品牌 Logo 应用领域
FILTRONIC 开关光电二极管
页数 文件大小 规格书
6页 183K
描述
GaAs Multi-Purpose Wide Band SPDT Switch

FMS2020-001-EB 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.74Base Number Matches:1

FMS2020-001-EB 数据手册

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Preliminary Data Sheet 2.2  
FMS2020QFN  
GaAs Multi-Purpose Wide Band SPDT Switch  
Functional Schematic  
Features:  
ANT  
3x3x0.9mm Packaged pHEMT Switch  
Suitable for L, S, and C-band digital  
cellular, cordless telephony and WLAN  
applications  
High isolation, 25dB typ at 2.5GHz  
Low insertion loss, 0.5dB typ at 2.5GHz  
Low insertion loss, 1.0dB typ at 6GHz  
P0.1dB > 38dBm at 2GHz  
V1  
V2  
RF1  
RF2  
Description and Applications:  
The FMS2020QFN is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna  
switch. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers leading  
edge performance optimised for switch applications. The FMS2020QFN is designed for use in L, S, and C  
band wireless applications and WLAN access points where high linearity switching is required.  
Electrical Specifications: (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50)  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
0.5 – 1.0 GHz  
1.0 – 2.0 GHz  
2.0 – 3.0 GHz  
3.0 – 4.0 GHz  
4.0 – 5.0 GHz  
5.0 –6.0 GHz  
0.4  
dB  
dB  
dB  
dB  
dB  
dB  
0.45  
0.55  
0.65  
0.75  
0.95  
Insertion Loss  
0.5 – 2.5 GHz  
2.5 – 5.0 GHz  
23  
18  
dB  
dB  
Return Loss  
Isolation  
0.5 – 1.0 GHz  
1.0 – 2.5 GHz  
2.5 – 6.0 GHz  
30  
25  
18  
dB  
dB  
dB  
1.0 GHz  
2.0 GHz  
2.5 GHz  
6.0 GHz  
>38  
>38  
>37  
>33  
dBm  
dBm  
dBm  
dBm  
Input power at 0.1dB compression point  
2nd Harmonic Level  
3rd Harmonic Level  
1 GHz, Pin = +35 dBm, 100% Duty Cycle  
1 GHz, Pin = +35 dBm, 100% Duty Cycle  
<-70  
<-70  
dBc  
dBc  
Switching speed : T rise, T fall  
T on, T off  
10% to 90% RF and 90% to 10% RF  
<0.3  
<1.0  
µs  
µs  
50% control to 90% RF and 50% control to 10% RF  
Control Current  
+35dBm RF input @1GHz  
<10  
µA  
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)  
All unused ports terminated in 50.  
1
Preliminary specifications subject to change without notice  
Filtronic Compound Semiconductors Ltd  
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com  
Contact Details (USA): Tel: +1 (408) 850-5790  
Fax: +1 (408) 850-5766  
Email: sales@filcsi.com  
Website: www.filtronic.co.uk/semis  

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