FMS2016-001
Datasheet v2.4
High Power Reflective GaAs SP4T Switch
FEATURES:
FUNCTIONAL SCHEMATIC:
•
•
•
•
•
3x3x0.9mm Packaged pHEMT Switch
ANT
High isolation: >30dB at 1.8GHz
Low Insertion loss: 0.65dB at 1.8GHz
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
RoHS Compliant (Directive 2002/95/EC)
RF1
RF3
RF2
RF4
•
GENERAL DESCRIPTION:
The FMS2016-001 is a low loss, high power and
linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset
and other high power switching applications. The
die is fabricated using the Filtronic FL05 0.5μm
switch process technology, which offers excellent
performance optimised for switch applications.
TYPICAL APPLICATIONS:
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•
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Multi-band GSM/DCS/PCS/EDGE handset
modules
High power and linear RF switching
applications
ELECTRICAL SPECIFICATIONS:
Parameter
Test Conditions
Min
Typ
Max
Units
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.55
0.65
0.75
0.85
dB
dB
Insertion Loss
Return Loss
0.5 – 2.5 GHz
16
30
26
20
dB
Isolation
0.5 – 1.0 GHz
1.0 – 2.0 GHz
34
32
dB
dB
RF1 – RF2, RF1 – RF3, RF2 – RF4
Isolation
0.5 – 1.0 GHz
1.0 – 2.0 GHz
34
30
dB
dB
RF3 – RF4
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-75
-60
-65
dBc
dBc
2nd Harmonic Level
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-75
-60
-65
dBc
dBc
Switching speed : Trise, Tfall
Ton, Toff
10% to 90% RF and 90% to 10% RF
μs
μs
<0.3
<10
50% control to 90% RF and 50% control to 10% RF
0.5
15
Control Current
IP3
+35dBm RF input @1GHz
μA
0.9 & 0.91 GHz, Pin = +20 dBm
1.85 & 1.86 GHz, Pin = +20 dBm
>68
>66
dBm
dBm
1.0GHz
2.0GHz
>38
>37
dBm
dBm
P0.1dB
Note:
TAMBIENT = 25°C, Vctrl = 0V/2.7V, ZIN = ZOUT = 50Ω
External DC blocking capacitors are required on all RF ports (typ: 47pF)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com