Datasheet > 射频和微波 > 射频/微波开关> FMS2014-001

FMS2014-001

更新时间： 2024-02-21 11:17:48

品牌	Logo	应用领域
FILTRONIC		开关光电二极管
页数	文件大小	规格书
6页	189K
描述
High Power GaAs SPDT Switch

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技术参数
数据手册

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FMS2014-001 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, QFN-12	Reach Compliance Code：	unknown
风险等级：	5.74	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	45.8 dBm	最大插入损耗：	0.55 dB
最小隔离度：	26 dB	JESD-609代码：	e3
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	12	最高工作温度：	100 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	LCC12,.12SQ,20	射频/微波设备类型：	SPDT
子类别：	RF/Microwave Switches	表面贴装：	YES
技术：	GAAS	端子面层：	Matte Tin (Sn) - annealed
Base Number Matches：	1

FMS2014-001 数据手册

FMS2014QFN

Preliminary Data Sheet ^2.1

High Power GaAs SPDT Switch

Features:

Functional Schematic

♦

3x3x0.9mm Packaged pHEMT Switch

Excellent low control voltage performance

Excellent harmonic performance under

GSM/DCS/PCS/EDGE power levels

Very high Tx-Rx isolation: >28dB typ. at

1.8GHz

ANT

♦

Very low Insertion loss: 0.5dB at 1.8GHz

Very low control current

RF1

RF2

Description and Applications:

The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide

antenna switch designed for use in mobile handset applications. The die is fabricated using the

Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for

switch applications. The FMS2014QFN is designed for use in dual/tri and quad band GSM handset

antenna switch modules and RF front-end modules. It can also find use in other applications where

high power and linear RF switching is necessary.

Electrical Specifications: (T_AMBIENT= 25°C,V_ctrl= 0V/2.5V, Z_IN= Z_OUT= 50Ω)

Parameter

Test Conditions

Min

Typ

Max

Units

Insertion Loss

0.5 – 1.0 GHz

1.0 – 2.0 GHz

0.45

0.5

Return Loss

Isolation

0.5 – 2.5 GHz

0.5 – 1.0 GHz

1.0 – 2.0 GHz

-32

-30

2nd Harmonic Level

3rd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +35 dBm, 100% Duty Cycle

-75

dBc

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +35 dBm, 100% Duty Cycle

-75

dBc

Switching speed : Trise, Tfall

Ton, Toff

10% to 90% RF and 90% to 10% RF

<0.3

µs

50% control to 90% RF and 50% control to 10% RF

1.0

Control Current

+35dBm RF input @1GHz

<10

µA

Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)

Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com

Contact Details (USA): Tel: +1 (408) 850 5790

Fax: +1 (408) 850 5766

Email: sales@filcsi.com

Website: www.filtronic.com

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