Preliminary Data Sheet 2.1
FMS2013
SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
Functional Schematic
Features:
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Available as RF Known Good Die
RF01
Excellent low control voltage performance
Excellent harmonic performance
V2
Very high isolation >49dB typ. up to 4GHz
Very low Tx Insertion loss <1.0 dB at 4GHz
V1
RFIN
RF02
Description and Applications:
The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch
designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated
using the Filtronic FL05 0.5µm switch process technology which offers market leading performance
optimised for switch applications.
Electrical Specifications: (TOP = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω)
Parameter
Test Conditions
Min
Typ
Max
Units
Tx Insertion Loss
Rx Insertion Loss
Return Loss
4GHz
4GHz
4GHz
4GHz
4GHz
4GHz
1.0
1.0
dB
dB
dB
15
VSWR On State
VSWR Off State
1:1.3
1:1.4
49
Isolation at 4 GHz
dB
2nd Harmonic Level
3GHz, Pin = 21dBm, Vctrl = 3V
3GHz, Pin = 27dBm, Vctrl = 5V
-72
-68
dBc
dBc
Switching speed
Pin = 21dBm, 10% to 90% RF
30
ns
Note: External DC blocking capacitors are required on all RF ports (typ: 47pF).
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: sales@filss.com
Website: www.filcs.com