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FMS2003QFN PDF预览

FMS2003QFN

更新时间: 2024-01-08 06:55:12
品牌 Logo 应用领域
FILTRONIC 射频和微波开关射频开关微波开关
页数 文件大小 规格书
6页 180K
描述
High Power Reflective GaAs SP4T Switch

FMS2003QFN 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.2Is Samacsys:N
Base Number Matches:1

FMS2003QFN 数据手册

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FMS2003QFN-1  
Preliminary Data Sheet 2.1  
High Power Reflective GaAs SP4T Switch  
Features:  
Functional Schematic  
3x3x0.9mm Packaged pHEMT Switch  
ANT  
NiPdAu finish for Military and High  
reliability applications  
Excellent low control voltage performance  
Excellent harmonic performance under  
GSM/DCS/PCS/EDGE power levels  
High isolation: >30dB at 0.9GHz  
Low Insertion loss: 0.5dB at 0.9GHz  
Low control current  
RF1  
RF3  
RF2  
RF4  
Description and Applications:  
The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide  
antenna switch designed for use in mobile handset applications. The die is fabricated using the  
Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for  
switch applications. The FMS2003QFN is designed for use in dual/tri and quad band GSM handset  
antenna switch modules and RF front-end modules. It can also find use in other applications where  
high power and linear RF switching is necessary.  
Electrical Specifications: (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50)  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
0.5 – 1.0 GHz  
1.0 – 2.0 GHz  
<0.62  
<0.65  
dB  
dB  
Insertion Loss  
Return Loss  
Isolation  
0.5 – 2.5 GHz  
20  
dB  
0.5 – 1.0 GHz  
1.0 – 2.0 GHz  
>30  
>26  
dB  
dB  
1 GHz, Pin = +35 dBm, 100% Duty Cycle  
2 GHz, Pin = +33dBm, 100% Duty Cycle  
-69  
-67  
dBc  
dBc  
2nd Harmonic Level  
3rd Harmonic Level  
Switching speed : Trise, Tfall  
P0.1dB  
1 GHz, Pin = +35 dBm, 100% Duty Cycle  
2 GHz, Pin = +33dBm, 100% Duty Cycle  
-69  
-70  
dBc  
dBc  
10% to 90% RF  
90% to 10% RF  
<0.15  
<0.06  
µs  
µs  
0.5 – 1.0 GHz  
1.0 – 2.0 GHz  
38  
38  
dBm  
dBm  
0.5 – 1.0 GHz  
1.0 – 2.0 GHz  
>65  
>62  
IP3  
Tx1 836Hz Tx2 837MHz +21dBm Rx1 880MHz –25dBm  
Cross modulation  
Control Current  
>110  
<10  
dBm  
Tx1 1879.5MHz Tx2 1880.5MHz +21dBm,Rx1 1960MHz –25dBm  
+35dBm RF input @1GHz  
µA  
1
Preliminary specifications subject to change without notice  
Filtronic Compound Semiconductors Ltd  
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com  
Contact Details (USA): Tel: +1 (408) 850-5790  
Fax: +1 (408) 850-5766  
Email: sales@filcsi.com  
Website: www.filtronic.com  

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