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FII24N17AH1 PDF预览

FII24N17AH1

更新时间: 2024-11-26 19:42:51
品牌 Logo 应用领域
IXYS 功率控制晶体管
页数 文件大小 规格书
2页 80K
描述
Insulated Gate Bipolar Transistor, 18A I(C), 1700V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5

FII24N17AH1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:ISOPLUS
包装说明:ISOPLUS, I4PAC-5针数:5
Reach Compliance Code:compliant风险等级:5.71
其他特性:UL RECOGNISED外壳连接:ISOLATED
最大集电极电流 (IC):18 A集电极-发射极最大电压:1700 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 代码:R-PSIP-T5
JESD-609代码:e1元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):275 ns
标称接通时间 (ton):100 nsBase Number Matches:1

FII24N17AH1 数据手册

 浏览型号FII24N17AH1的Datasheet PDF文件第2页 
Advance Technical Data  
FII24N17AH1  
= 18 A  
FII24N170AH1  
IC25  
High Voltage IGBT  
Phase-Leg  
VCES = 1700 V  
VCE(sat) = 6.0 V  
ISOPLUS i4-PACTM Package  
3
5
4
1
2
1
5
IGBT  
Features  
Symbol  
VCES  
Conditions  
Maximum Ratings  
z
NPT3 IGBT  
TVJ = 25°C to 150°C  
1700  
V
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
- fast switching  
- short tail current for optimized  
performance in resonant circuits  
SONIC-FRDTM diode  
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
ISOPLUS i4-PACTM package  
- isolated back surface  
- low coupling capacity between pins  
and heatsink  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
18  
11  
75  
A
A
A
z
z
+
RBSOA  
VGE = 15 V; RG = 5 ; TVJ = 125°C  
50  
A
Clamped inductive load; Vclamp = 1360V  
PC  
TC = 25°C  
140  
W
- enlarged creepage towards heatsink  
- application friendly pinout  
- low inductive current path  
- high reliability  
- industry standard outline  
- UL registered, E 72873  
Symbol  
VCE(sat)  
Conditions  
Characteristic Values  
(TVJ = 25°C unless otherwise specified)  
min.  
typ. max.  
IC = 16 A; VGE = 15 V  
4.5  
4.8  
6.0  
5.0  
V
V
TVJ = 125°C  
VGE(th)  
ICES  
IC = 250 µA; VGE = VCE  
3.0  
V
Applications  
VCE = 0.8 VCES;VGE = 0 V  
TVJ = 125°C  
100 µA  
1.5 mA  
z
Single phaseleg  
- buck-boost chopper  
H-bridge  
- power supplies  
- induction heating  
- four quadrant DC drives  
- controlled rectifier  
Three phase bridge  
- AC drives  
z
IGES  
VCE = 0 V; VGE  
=
20 V  
100 nA  
td(on)  
tr  
td(off)  
tf  
48  
60  
ns  
ns  
Inductive load  
VCE = 600 V; IC = 24 A  
±
200  
45  
ns  
ns  
VGE = 15 V; RG = 39 Ω  
z
Eoff  
1.1  
mJ  
- controlled rectifier  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
40  
60  
220  
55  
2.5  
1.7  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 24 A  
±
VGE = 15 V; RG = 39 Ω  
Note: All characteristic values and ratings refer to a single IGBT or diode  
except VCES, ICES and Coes.  
IXYS reserves the right to change limits, test conditions and dimensions.  
DS99231A (08/05)  
© 2005 IXYS All rights reserved  

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