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FGW75XS65C PDF预览

FGW75XS65C

更新时间： 2024-10-31 15:19:35
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 367K
描述
Molded Package TO-247

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FGW75XS65C 数据手册

 浏览型号FGW75XS65C的Datasheet PDF文件第2页浏览型号FGW75XS65C的Datasheet PDF文件第3页浏览型号FGW75XS65C的Datasheet PDF文件第4页浏览型号FGW75XS65C的Datasheet PDF文件第5页浏览型号FGW75XS65C的Datasheet PDF文件第6页浏览型号FGW75XS65C的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW75XS65C  
Discrete IGBT (XS-series)  
650V / 75A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness  
Applications  
Uninterruptible power supply  
PV Power coditionner  
Inverter welding machine  
Maximum Ratings and Characteristics  
Equivalent circuit  
Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified)  
Parameter  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
Symbol  
CES  
Value  
650  
± 20  
± 30  
115  
Unit  
V
Remarks  
② Collector  
V
V
GES  
V
Transient Gate-Emitter Voltage  
t < 1 μs  
= 25 °C  
= 100 °C  
Note *1  
CE ≤ 650 V  
vj ≤ 175 °C  
p
I
I
I
C@25  
A
A
A
T
T
C
DC Collector Current  
C@100  
CP  
75  
300  
C
Pulsed Collector Current  
Turn-Off Safe Operating Area  
①
Gate  
V
T
-
300  
A
①
②
I
I
I
P
P
F@25  
118  
75  
300  
437  
327  
A
A
A
W
W
°C  
°C  
③ Emitter  
③
Diode Forward Current  
F@100  
FP  
Diode Pulsed Current  
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
Operating Junction Temperature Tvj  
Storage Temperature  
Note *1  
= 25 °C  
= 25 °C  
TO-247-P/TO-247-P2  
tot_IGBT  
tot_FWD  
T
T
C
C
-40 ~ +175  
-55 ~ +175  
T
stg  
Note *1 : Pulse width limited by Tvj max  
.
Electrical Characteristics at Tvj = 25 °C (unless otherwise specified)  
Parameter  
Symbol Conditions  
Zero Gate Voltage  
Min.  
-
-
Typ.  
-
-
Max.  
250  
2
Unit  
μA  
mA  
T
T
vj = 25 °C  
vj = 175 °C  
V
V
V
V
V
CE = 650 V  
I
CES  
Collector Current  
GE = 0 V  
Gate-Emitter  
Leakage Current  
Gate-Emitter  
CE = 0 V  
I
GES  
-
-
200  
4.6  
nA  
V
GE = ± 20 V  
CE = 20 V  
= 75 mA  
V
GE(th)  
3.4  
4.0  
Threshold Voltage  
IC  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
-
-
-
-
-
-
1.35  
1.5  
1.6  
5940  
134  
60  
1.7  
Collector-Emitter  
Saturation Voltage  
V
GE = 15 V  
= 75 A  
V
CE(sat)  
-
-
-
-
-
V
I
C
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE = 25 V  
GE = 0 V  
oes  
res  
pF  
nC  
f = 1 MHz  
VCC = 520 V  
Gate Charge  
Q
G
I
C
= 75 A  
-
300  
-
VGE = 15 V  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Turn-On Energy  
Turn-Off Energy  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
E
E
d(on)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
44  
58  
340  
28  
1.3  
0.94  
44  
54  
380  
46  
1.6  
1
1.7  
1.78  
1.78  
90  
-
-
-
-
-
-
-
-
-
-
-
-
T
V
vj= 25 °C  
r
CC = 400 V  
= 37.5 A  
GE = 15 V  
ns  
mJ  
ns  
d(off)  
f
I
C
V
R
G
= 10 Ω  
on  
off  
Energy loss include “tail” and FWD reverse recovery.  
t
t
t
t
d(on)  
Tvj = 150 °C  
r
V
CC = 400 V  
= 37.5 A  
GE = 15 V  
d(off)  
f
I
C
V
R
G
= 10 Ω  
Turn-On Energy  
Turn-Off Energy  
E
E
on  
off  
mJ  
Energy loss include “tail” and FWD reverse recovery.  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
2.15  
V
V
V
Forward Voltage Drop  
V
F
IF  
= 75 A  
-
-
-
V
CC = 400 V  
= 37.5 A  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
trr  
ns  
I
F
-di /dt = 500 A/μs  
F
Q
rr  
-
-
-
1.1  
134  
2.4  
-
-
-
µC  
ns  
Tvj = 25 °C  
V
CC = 400 V  
= 37.5 A  
trr  
I
F
-di  
F
/dt = 500 A/μs  
Q
rr  
µC  
Tvj = 150 °C  
9338  
SEPTEMBER 2018  
1
12345678

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