DATA SHEET
www.onsemi.com
EcoSPARKꢀ 3 Ignition IGBT
200 mJ, 400 V, N-Channel Ignition
IGBT
200 mJ, 400 V
CE(on) = 1.6 V
@ IC = 6 A, VGE = 4 V
V
Product Preview
COLLECTOR
FGD2040G3-F085
Features
R
1
• SCIS Energy = 200 mJ at T = 25°C
J
GATE
• Low Saturation Voltage
R
2
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
EMITTER
• RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Applications
4
2
1
3
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
DPAK (SINGLE GAUGE)
CASE 369C
Symbol
Parameter
Value
Units
BV
Collector−to−Emitter Breakdown
Voltage (I = 1 mA)
400
V
CER
C
BV
Emitter−to−Collector Voltage − Reverse
28
V
mJ
mJ
A
ECS
MARKING DIAGRAM
Battery Condition (I = 10 mA)
C
E
ISCIS = 11.5 A, L = 3.0 mHy,
200
125
23.6
13.6
SCIS25
AYWW
FGD
2040G3
R
= 1 KW, T = 25°C (Note 1)
GE
C
E
ISCIS = 9.1 A, L = 3.0 mHy,
= 1 KW, T = 150°C (Note 2)
SCIS150
R
GE
C
I
Collector Current Continuous
A
Y
WW
= Assembly Location
= Year
= Work Week
C25
at V = 5.0 V, T = 25°C
GE
C
I
Collector Current Continuous
at V = 5.0 V, T = 110°C
A
C110
FGD2040G3 = Device Code
GE
C
V
Gate−to−Emitter Voltage Continuous
Power Dissipation Total, T = 25°C
10
125
V
W
GEM
P
D
C
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
Power Dissipation Derating, T > 25°C
0.83
W/°C
°C
C
T , T
Operating Junction and Storage
Temperature Range
−55 to 175
J
STG
T
L
Lead Temperature for Soldering
Purposes (1/8″ from case for 10 s)
300
°C
T
Reflow soldering according to JESD020C
260
4
°C
PKG
ESD
HBM − Electrostatic Discharge Voltage
at 100 pF, 1500 W
kV
2
kV
CDM − Electrostatic Discharge Voltage
at 1 W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self Clamped inductive Switching Energy (ESCIS25) of 200 mJ is based on
the test conditions that is starting T = 25°C, L = 3 mHy, ISCIS = 11.5 A, V
J
CC
= 100 V during inductor charging and V = 0 V during time in clamp.
CC
2. Self Clamped inductive Switching Energy (ESCIS150) of 125 mJ is based on
This document contains information on a product under
development. onsemi reserves the right to change or
discontinue this product without notice.
the test conditions that is starting T = 150°C, L = 3mHy, ISCIS = 9.1 A, V
=
J
CC
100 V during inductor charging and V = 0 V during time in clamp.
CC
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. P0
FGD2040G3−F085/D
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