Datasheet > 晶体管 > IGBT> FGA25N120FTD

FGA25N120FTD

更新时间： 2024-09-18 03:36:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
9页	831K
描述
1200V, 25A Field Stop Trench IGBT

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中文翻译

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技术参数
数据手册

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FGA25N120FTD 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	8.59	Base Number Matches：	1

FGA25N120FTD 数据手册

April 2008

FGA25N120FTD

1200V, 25A Field Stop Trench IGBT

Features

•

Field stop trench technology

General Description

High speed switching

Using advanced field stop trench technology, Fairchild’s 1200V

trench IGBTs offer superior conduction and switching perfor-

mances, and easy parallel operation with exceptional avalanche

ruggedness. This device is designed for soft switching applica-

tions.

Low saturation voltage: V_CE(sat)=1.6V @ I_C= 25A

High input impedance

RoHS complaint

Applications

•

Induction heating and Microvewave oven

•

Soft switching applications

TO-3P

Absolute Maximum Ratings

Symbol

Description

Ratings

1200

± 25

Units

V_CES

V_GES

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

@ T_C= 25^oC

@ T_C= 100^oC

I_C

Collector Current

I_{CM (1)}

I_C

Pulsed Collector Current

@ T_C= 100^oC

@ T_C= 25^oC

@ T_C= 100^oC

Diode continuous Forward current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

313

^oC

P_D

125

T_J

-55 to +150

T_stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

^oC

T_L

300

Notes:

1: Repetitiverating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

R_θJC(IGBT)

R_θJC(Diode)

R_θJA

Parameter

Typ.

Max.

0.4

Units

^oC/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.42

FGA25N120FTD Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

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