Datasheet > FGA25N120ANTD_07

FGA25N120ANTD_07

更新时间： 2024-11-07 06:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
9页	656K
描述
1200V NPT Trench IGBT

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FGA25N120ANTD_07 数据手册

July, 2007

FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

Features

Description

•

NPT Trench Technology, Positive temperature coefficient

Using Fairchild's proprietary trench design and advanced NPT

technology, the 1200V NPT IGBT offers superior conduction

and switching performances, high avalanche ruggedness and

easy parallel operation.

•

Low saturation voltage: V_{CE(sat), typ}= 2.0V

@ I_C= 25A and T_C= 25°C

•

Low switching loss: E_{off, typ}= 0.96mJ

@ I_C= 25A and T_C= 25°C

This device is well suited for the resonant or soft switching appli-

cation such as induction heating, microwave oven, etc.

Extremely enhanced avalanche capability

TO-3PN

Absolute Maximum Ratings

Symbol

Description

FGA25N120ANTD

Units

V_CES

V_GES

I_C

Collector-Emitter Voltage

Gate-Emitter Voltage

1200

± 20

Collector Current

@ T_C

25°C

Collector Current

@ T_C= 100°C

I_CM

I_F

Pulsed Collector Current (Note 1)

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

@ T_C= 100°C

I_FM

P_D

150

@ T_C

25°C

312

°C

@ T_C= 100°C

125

T_J

-55 to +150

300

T_stg

T_L

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case for IGBT

Thermal Resistance, Junction-to-Case for Diode

Thermal Resistance, Junction-to-Ambient

0.4

2.0

°C/W

www.fairchildsemi.com

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2

12 3 4 5 6 7...9

中文翻译

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