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FG6943010R PDF预览

FG6943010R

更新时间: 2024-09-24 12:31:15
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
11页 324K
描述
Silicon N-channel MOSFET

FG6943010R 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SC-107C, 6 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:1.69
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:178719Samacsys Pin Count:6
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SO Transistor Flat Lead
Samacsys Footprint Name:SSMini6-F3-BSamacsys Released Date:2015-04-17 13:41:21
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):0.1 A
最大漏源导通电阻:6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F6JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FG6943010R 数据手册

 浏览型号FG6943010R的Datasheet PDF文件第2页浏览型号FG6943010R的Datasheet PDF文件第3页浏览型号FG6943010R的Datasheet PDF文件第4页浏览型号FG6943010R的Datasheet PDF文件第5页浏览型号FG6943010R的Datasheet PDF文件第6页浏览型号FG6943010R的Datasheet PDF文件第7页 
FG6943010R  
FG6943010R  
Silicon N-channel MOSFET(FET1)  
Unit: mm  
Silicon P-channel MOSFET(FET2)  
For switching  
„ Features  
y Low drive voltage: 2.5 V drive  
y Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
„ Marking Symbol: V7  
„ Basic Part Number  
FJ330301 + FK330301 (Individual)  
1. Source(FET1)  
2. Gate(FET1)  
3. Drain(FET2)  
4. Source(FET2)  
5. Gate(FET2)  
6. Drain(FET1)  
„ Packaging  
FG6943010R Embossed type (Thermo-compression sealing):  
Panasonic  
JEITA  
SSMin6-F3-B  
SC-107C  
8 000 pcs / reel (standard)  
Code  
SOT-666  
„ Absolute Maximum RatingsTa = 25 °C  
Internal Connection  
Parameter  
Drain-Source Voltage  
Gate-source Voltage  
Drain Current  
Symbol  
VDS  
VGS  
ID  
Rating  
30  
Unit  
V
V
mA  
mA  
V
6
5
4
12  
100  
200  
-30  
FET1  
(N-ch.)  
FET 1  
Drain Current (Pulsed)  
Drain-source Voltage  
Gate-source Voltage  
Drain Current  
IDp  
VDS  
VGS  
ID  
IDp  
PD  
V
12  
FET2  
(P-ch.)  
FET 2  
-100  
-200  
125  
mA  
mA  
mW  
°C  
°C  
Drain Current (Pulsed)  
Total Power Dissipation  
Overall Channel Temperature  
Storage Temperature  
1
2
3
Tch  
Tstg  
150  
-55 to +150  
Pin Name  
1. Source(FET1)  
2. Gate(FET1)  
3. Drain(FET2)  
4. Source(FET2)  
5. Gate(FET2)  
6. Drain(FET1)  
Publication date: September 2012  
Ver. BED  
1

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