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FG4000EX-50DA PDF预览

FG4000EX-50DA

更新时间: 2024-11-17 22:07:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 栅极触发装置可控硅整流器高功率电源
页数 文件大小 规格书
4页 75K
描述
HIGH POWER INVERTER USE PRESS PACK TYPE

FG4000EX-50DA 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.09
Is Samacsys:N配置:SINGLE
最大直流栅极触发电流:5000 mA最大直流栅极触发电压:1.5 V
JESD-30 代码:O-CEPF-N2最大漏电流:50 mA
通态非重复峰值电流:24000 A元件数量:1
端子数量:2最大通态电流:1600000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:PRESS FIT认证状态:Not Qualified
最大均方根通态电流:2500 A断态重复峰值电压:2500 V
重复峰值反向电压:17 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:GATE TURN-OFF SCR
Base Number Matches:1

FG4000EX-50DA 数据手册

 浏览型号FG4000EX-50DA的Datasheet PDF文件第2页浏览型号FG4000EX-50DA的Datasheet PDF文件第3页浏览型号FG4000EX-50DA的Datasheet PDF文件第4页 
MITSUBISHI GATE TURN-OFF THYRISTORS  
FG4000EX-50DA  
HIGH POWER INVERTER USE  
PRESS PACK TYPE  
OUTLINE DRAWING  
Dimensions in mm  
FG4000EX-50DA  
GATE (WHITE)  
500 ± 8  
AUXILIARY CATHODE  
CONNECTOR (RED)  
φ 3.5 DEPTH 2.2 ± 0.2  
CATHODE  
φ 85 ± 0.2  
TYPE NAME  
ITQRM Repetitive controllable on-state current ...........4000A  
IT(AV) Average on-state current.....................1600A  
VDRM Repetitive peak off state voltage ...................2500V  
Anode short type  
ANODE  
φ 85 ± 0.2  
φ 3.5 DEPTH 2.2 ± 0.2  
φ 120 MAX  
APPLICATION  
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
50DA  
17  
VRRM  
VRSM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
V
V
V
V
V
V
17  
VR(DC)  
VDRM  
17  
+
Repetitive peak off-state voltage  
2500  
2500  
1500  
+
VDSM  
Non-repetitive peak off-state voltage  
DC off-state voltage+  
VD(DC)  
+ : VGK = –2V  
Symbol  
ITQRM  
IT(RMS)  
IT(AV)  
ITSM  
Parameter  
Conditions  
Ratings  
4000  
2500  
1600  
24  
Unit  
A
Repetitive controllable on-state current VDM = 1875V, Tj = 125°C, CS = 6.0µF, LS = 0.2µH  
RMS on-state current  
A
Average on-state current  
f = 60Hz, sine wave θ = 180°, Tf = 72°C  
A
Surge (non-repetitive) on-state current One half cycle at 60Hz  
Current-squared, time integration One cycle at 60Hz  
Critical rate of rise of on-state current VD = 1250V, IGM = 50A, Tj = 125°C  
Peak forward gate voltage  
kA  
A2s  
A/µs  
V
I2t  
2.4 × 106  
diT/dt  
VFGM  
VRGM  
IFGM  
IRGM  
PFGM  
PRGM  
PFG(AV)  
PRG(AV)  
Tj  
500  
10  
Peak reverse gate voltage  
17  
V
Peak forward gate current  
130  
A
Peak gate reverse current  
1100  
A
Peak forward gate power dissipation  
520  
W
kW  
W
W
°C  
°C  
kN  
g
33  
Peak reverse gate power dissipation  
130  
Average forward gate power dissipation  
300  
Average reverse gate power dissipation  
–40 ~ +125  
–40 ~ +150  
39 ~ 55  
1600  
Junction temperature  
Tstg  
Storage temperature  
Mounting force required  
Weight  
Recommended value 45  
Standard value  
Aug.1998  

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