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FG3300AH50DA PDF预览

FG3300AH50DA

更新时间: 2024-11-20 20:29:47
品牌 Logo 应用领域
三菱 - MITSUBISHI 栅极
页数 文件大小 规格书
4页 75K
描述
1570A, 2500V, GATE TURN-OFF SCR, PRESSPACK-3

FG3300AH50DA 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
针数:3Reach Compliance Code:unknown
风险等级:5.26Is Samacsys:N
配置:SINGLE最大直流栅极触发电流:4000 mA
最大直流栅极触发电压:1.5 VJESD-30 代码:O-CEDB-N2
最大漏电流:150 mA通态非重复峰值电流:24000 A
元件数量:1端子数量:2
最大通态电流:1000000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:1570 A
断态重复峰值电压:2500 V重复峰值反向电压:17 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:GATE TURN-OFF SCRBase Number Matches:1

FG3300AH50DA 数据手册

 浏览型号FG3300AH50DA的Datasheet PDF文件第2页浏览型号FG3300AH50DA的Datasheet PDF文件第3页浏览型号FG3300AH50DA的Datasheet PDF文件第4页 
MITSUBISHI GATE TURN-OFF THYRISTORS  
FG3300AH-50DA  
HIGH POWER INVERTER USE  
PRESS PACK TYPE  
OUTLINE DRAWING  
Dimensions in mm  
FG3300AH-50DA  
GATE (WHITE)  
412 ± 8  
AUXILIARY CATHODE  
CONNECTOR (RED)  
φ 3.5 DEPTH 2.2 ± 0.2  
CATHODE  
φ 70 ± 0.2  
TYPE NAME  
ITQRM Repetitive controllable on-state current ...........3300A  
IT(AV) Average on-state current.....................1000A  
VDRM Repetitive peak off state voltage ...................2500V  
Anode short type  
ANODE  
φ 70±0.2  
φ 3.5 DEPTH 2.2 ± 0.2  
φ 108 MAX  
APPLICATION  
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
50DA  
17  
VRRM  
VRSM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
V
V
V
V
V
V
17  
VR(DC)  
VDRM  
17  
+
Repetitive peak off-state voltage  
2500  
2500  
2000  
+
VDSM  
Non-repetitive peak off-state voltage  
DC off-state voltage+  
VD(DC)  
+ : VGK = –2V  
Symbol  
ITQRM  
IT(RMS)  
IT(AV)  
ITSM  
Parameter  
Conditions  
Ratings  
3300  
1570  
1000  
24  
Unit  
A
Repetitive controllable on-state current VDM = 1875V, Tj = 125°C, CS = 6.0µF, LS = 0.2µH  
RMS on-state current  
A
Average on-state current  
f = 60Hz, sine wave θ = 180°, Tf = 81°C  
A
Surge (non-repetitive) on-state current One half cycle at 60Hz  
Current-squared, time integration One cycle at 60Hz  
Critical rate of rise of on-state current VD = 1250V, IGM = 40A, Tj = 125°C  
Peak forward gate voltage  
kA  
A2s  
A/µs  
V
I2t  
2.4 × 106  
diT/dt  
VFGM  
VRGM  
IFGM  
IRGM  
PFGM  
PRGM  
PFG(AV)  
PRG(AV)  
Tj  
500  
10  
Peak reverse gate voltage  
17  
V
Peak forward gate current  
100  
A
Peak gate reverse current  
1100  
A
Peak forward gate power dissipation  
400  
W
kW  
W
W
°C  
°C  
kN  
g
Peak reverse gate power dissipation  
27  
Average forward gate power dissipation  
100  
Average reverse gate power dissipation  
230  
Junction temperature  
–40 ~ +125  
–40 ~ +150  
30 ~ 40  
1220  
Tstg  
Storage temperature  
Mounting force required  
Weight  
Recommended value 33  
Standard value  
Aug.1998  

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