Datasheet > FFM301B

FFM301B

更新时间： 2024-10-15 02:49:59

品牌	Logo	应用领域
RECTRON		快速恢复二极管
页数	文件大小	规格书
9页	177K
描述
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FFM301B 数据手册

FFM301B

THRU

FFM307B

SURFACE MOUNT GLASS PASSIVATED

FAST RECOVERY SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere

FEATURES

* Glass passivated device

* Ideal for surface mounted applications

* Low leakage current

* Metallurgically bonded construction

* Mounting position: Any

* Weight: 0.098 gram

DO-214AA

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

0.083 (2.11)

0.077 (1.96)

0.155 (3.94)

0.130 (3.30)

0.180 (4.57)

0.160 (4.06)

0.012 (0.305)

0.006 (0.152)

0.096 (2.44)

0.084 (2.13)

0.060 (1.52)

0.030 (0.76)

0.008 (0.203)

0.004 (0.102)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.220 (5.59)

0.205 (5.21)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (@ T

=25 C unless otherwise noted)

RATINGS

SYMBOL

FFM301B FFM302B FFM303B FFM304B FFM305B FFM306B FFM307B UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

200

Volts

400

280

400

600

420

600

800

560

800

1000

700

RRM

140

200

RMS

100

1000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

3.0

Amps

at T = 55^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

200

Amps

A²/S

FSM

I²t

Typical Current Squared Time

165.9

QJA

QJL

⁰C/W

Typical Thermal Resistance (Note 4)

Typical Junction Capacitance (Note 2)

⁰C

Operating and Storage Temperature Range

T , T

-55 to + 150

STG

ELECTRICAL CHARACTERISTICS (@T

=25 C unless otherwise noted)

CHARACTERISTICS

SYMBOL

UNITS

FFM301B FFM302B FFM303B FFM304B FFM305B FFM306B FFM307B

Maximum Instantaneous Forward Voltage at 3.0A DC

1.30

2.0

Volts

@T = 25^oC

uAmps

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@T = 150^oC

mAmps

nSec

1.0

Maximum Reverse Recovery Time (Note 1)

trr

150

250

500

2018-10

REV:A

NOTES : 1. Reverse Recovery Test Conditions: I

2. Measured at 1 MH

3. “ ROHS compliant."

4. Thermal Resistance : Mounted on PCB.

5. Available in Halogen-free epoxy by adding suffix -HF after the part nbr.

= 0.5A, I

= -1.0A, IRR = -0.25A

and applied reverse voltage of 4.0 volts

12 3 4 5 6 7...9

中文翻译

下载PDF

与FFM301B相关器件

型号	品牌	获取价格	描述	数据表
FFM301B-HF-W	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
FFM301-BS	FORMOSA	获取价格	Chip Fast Recovery Rectifiers
FFM301CG	FIRST	获取价格	Chip Silicon Rectifier
FFM301L	WILLAS	获取价格	3.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
FFM301L	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Vo
FFM301-T	RECTRON	获取价格	暂无描述
FFM301-W	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AB, DO-214AB, 2 PIN
FFM302	SUNMATE	获取价格	3.0A patch fast recovery diode 100V SMC series
FFM302	FORMOSA	获取价格	Fast recovery type
FFM302	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 V

与FFM301B相关文章

纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

3
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

10
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

15
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

15

产品中心

服务支持

精选活动

关于我们

帮助中心

FFM301B

FFM301B 数据手册

与FFM301B相关器件

与FFM301B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FFM301B

FFM301B 数据手册

与FFM301B相关器件

与FFM301B相关文章

您还可以找

您在本页遇到什么问题？