Datasheet > FFM206AG

FFM206AG

更新时间： 2024-10-15 00:59:15

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福斯特 - FIRST		/
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描述
Chip Silicon Rectifier

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获取价格

数据手册

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FFM206AG 数据手册

FFM201AG THRU FFM207AG

Chip Silicon Rectifier

2.0A Fast Recovery

Rectifiers-50-1000V

Package outline

DO-214AC(SMA)

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

•

optimize board space.

• High current capability.

• Fast switching for high efficiency.

• High surge current capability.

• Glass passivated chip junction.

• Lead- free parts meet RoHS requirments.

1.Cathode

2. Anode

Mechanical data

• Epoxy: UL94-V0 rated frame retardant

• Case: Molded plastic, JEDEC DO-214AC / SMAK

• Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

• Polarity: lndicated by cathode band

• Mounting Position: Any

Weight: Approximated 0.07 gram

Dimensions in inches and (millimeters)

•

Maximum ratings ^{(AT T}_A⁼²⁵^o^{C unless otherwise noted)}

MAX.

2.0

Symbol

I_O

UNIT

MIN.

TYP.

PARAMETER

CONDITIONS

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

I_FSM

Forward surge current

Reverse current

V_R= V_RRMT_J= 25^OC

5.0

I_R

μA

V_R= V_RRMT_J= 125^OC

100

Thermal resistance

Junction to ambient

R_θJA

C_J

^OC/W

Diode junction capacitance

Storage temperature

f=1MHz and applied 4V DC reverse voltage

^OC

+150

-55

T_STG

Operating

temperature

T_J, (^OC)

T_RR

(nS)

V_R

(V)

V_F

(V)

V_RMS

(V)

SYMBOLS

V_RRM

(V)

*1 Repetitive peak reverse voltage

*2 RMS voltage

FFM201AG

FFM202AG

FFM203AG

100

200

400

100

200

400

150

140

280

420

560

700

*3 Continuous reverse voltage

1.30

-55 to +150

FFM204AG

FFM205AG

FFM206AG

FFM207AG

*4 Maximum forward voltage@I_F=2.0A

600

250

500

*5 Maximum Reverse recovery time, note 1

800

1000

Note 1. Reverse recovery time test condition, I^F=0.5A, I^R=1.0A, I^RR=0.25A

REV:1.0

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@ 2018 Copyright By American First Semiconductor

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