FFM201AFG PDF预览

FFM201AFG

更新时间: 2025-07-22 00:59:15
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福斯特 - FIRST /
页数 文件大小 规格书
3页 4196K
描述
Chip Silicon Rectifier

FFM201AFG 数据手册

 浏览型号FFM201AFG的Datasheet PDF文件第2页浏览型号FFM201AFG的Datasheet PDF文件第3页 
FFM201AFG THRU FFM207AFG  
Chip Silicon Rectifier  
SMAF  
1
2.0A Fast Recovery  
Rectifiers-50-1000V  
Features  
Batch process design, excellent power dissipation offers  
better reverse leakage current and thermal resistance.  
Low profile surface mounted application in order to  
optimize board space.  
High current capability.  
Fast switching for high efficiency.  
High surge current capability.  
Glass passivated chip junction.  
Lead- free parts meet RoHS requirments.  
MAX.  
2.0  
Symbol  
IO  
UNIT  
A
MIN.  
TYP.  
NS  
lf sine-wave superimposed on  
EDEC methode)  
IFSM  
50  
A
VRRM TJ = 25OC  
5.0  
IR  
μA  
VR = VRRM TJ = 125OC  
100  
Junction to ambient  
RθJA  
CJ  
65  
40  
OC/W  
pF  
itance  
rature  
f=1MHz and applied 4V DC reverse voltage  
OC  
+150  
-55  
TSTG  
Operating  
temperature  
TJ, (OC)  
*5  
TRR  
(nS)  
*1  
*3  
VR  
(V)  
*4  
VF  
(V)  
*2  
VRMS  
(V)  
SYMBOLS  
VRRM  
(V)  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
50  
35  
50  
FFM201AFG  
FFM202AFG  
FFM203AFG  
100  
200  
400  
70  
100  
200  
400  
150  
140  
280  
420  
560  
700  
*3 Continuous reverse voltage  
1.30  
-55 to +150  
FFM204AFG  
FFM205AFG  
FFM206AFG  
FFM207AFG  
*4 Maximum forward voltage@IF=2.0A  
600  
600  
250  
500  
*5 Maximum Reverse recovery time, note 1  
800  
800  
1000  
1000  
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A  
REV:1.0  
Page 1/3  
@ 2018 Copyright By American First Semiconductor  

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