Datasheet > FFM101B

FFM101B

更新时间： 2024-11-20 02:50:39

品牌	Logo	应用领域
RECTRON		快速恢复二极管
页数	文件大小	规格书
8页	383K
描述
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FFM101B 数据手册

FFM101B

THRU

FFM107B

SURFACE MOUNT GLASS PASSIVATED

FAST RECOVERY SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

* Glass passivated device

* Ideal for surface mounted applications

* Low leakage current

* Metallurgically bonded construction

* Mounting position: Any

* P/N suffix V means AEC-Q101 qualified, e.g:FFM101BV

SMB

* P/N suffix V means Halogen-free

0.083 (2.11)

0.077 (1.96)

0.155 (3.94)

0.130 (3.30)

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

0.180 (4.57)

0.160 (4.06)

0.012 (0.305)

0.006 (0.152)

0.096 (2.44)

0.084 (2.13)

0.060 (1.52)

0.030 (0.76)

0.008 (0.203)

0.004 (0.102)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.220 (5.59)

0.205 (5.21)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL FFM101B FFM102B FFM103BFFM104BFFM105BFFM106BFFM107B UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

1000

Volts

Amps

RMS

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current at T

= 55^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

Amps

A²S

I²T

3.74

Typical Current Squared Time

(Note 2) RQJL

(Note 3) RQJA

⁰C/W

Maximum Thermal Resistance

Typical Junction Capacitance (Note 1)

Operating and Storage Temperature Range

, TSTG

-55 to + 150

⁰C

ELECTRICAL CHARACTERISTICS (At T

= 25^oC unless otherwise noted)

FFM101B FFM102B FFM103BFFM104BFFM105BFFM106BFFM107B

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

Maximum Full Load Reverse Current,Full cycle Average at T

SYMBOL

UNITS

Volts

uAmps

1.3

5.0

= 25 C

= 25^oC

Maximum DC Reverse Current at

Rated DC Blocking Voltage

= 150^oC

2.0

mAmps

nSec

trr

150

250

500

Maximum Reverse Recovery Time (Note 4)

NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC

2019-04

REV: O

2. Thermal resistance junction to terminal 6.0mm²copper pads to each terminal.

3. Thermal resistance junction to ambient, 6.0mm²copper pads to each terminal.

4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A

12 3 4 5 6 7 8

中文翻译

下载PDF

与FFM101B相关器件

型号	品牌	获取价格	描述	数据表
FFM101BV-W	RECTRON	获取价格	SIGNAL DIODE,
FFM101FL	JINANJINGHENG	获取价格	FAST Recovery Rectifiers
FFM101L	WILLAS	获取价格	1.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
FFM101L	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Vo
FFM101-L	FORMOSA	获取价格	Chip Silicon Rectifier Fast recovery type
FFM101L-HF-T	RECTRON	获取价格	暂无描述
FFM101M	FRONTIER	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon,
FFM101-M	FORMOSA	获取价格	Fast recovery type
FFM101-M	CJ	获取价格	SOD-123FL
FFM101-M-F	HDSEMI	获取价格	SOD-123FL Plastic-Encapsulate Diodes

与FFM101B相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

FFM101B

FFM101B 数据手册

与FFM101B相关器件

与FFM101B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FFM101B

FFM101B 数据手册

与FFM101B相关器件

与FFM101B相关文章

您还可以找

您在本页遇到什么问题？