Datasheet > FFM101AG

FFM101AG

更新时间： 2024-11-24 00:59:15

品牌	Logo	应用领域
福斯特 - FIRST		/
页数	文件大小	规格书
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描述
1.0A Surface Mount Fast Recovery Rectifiers-50-1000V

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中文翻译

获取价格

数据手册

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FFM101AG 数据手册

FFM101AG THRU FFM107AG

Chip Silicon Rectifier

1.0A Surface Mount Fast

Recovery Rectifiers-50-1000V

Package outline

DO-214AC(SMA)

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

0.110(2.80)

0.094(2.40)

0.067 (1.70)

0.039 (1.00)

• High current capability.

• Fast switching for high efficiency.

0.177(4.50)

0.153(3.90)

• High surge current capability.

0.012(0.305)

0.006(0.152)

• Glass passivated chip junction.

• Lead-free parts meet RoHS requirments.

0.097(2.45)

0.078(1.98)

Mechanical data

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

• Epoxy:UL94-V0 rated flame retardant

0.222(5.66)

0.188(4.80)

• Case : Molded plastic, JEDEC DO-214AC / SMAD

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

• Polarity : Indicated by cathode band

• Mounting Position :Any

Dimensions in inches and (millimeters)

• Weight : Approximated 0.07 gram

Maximum ratings ^{(AT T}_A⁼²⁵^o^{C unless otherwise noted)}

MAX.

1.0

Symbol

I_O

UNIT

MIN.

TYP.

PARAMETER

CONDITIONS

Ambient temperature = 75^oC

Forward rectified current

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

I_FSM

Forward surge current

Reverse current

V_R= V_RRMT_J= 25^OC

5.0

I_R

μA

V_R= V_RRMT_J= 100^OC

Thermal resistance

Junction to ambient

R_θ

^OC/W

C_J

Diode junction capacitance

Storage temperature

f=1MHz and applied 4V DC reverse voltage

^OC

+150

-55

T_STG

Operating

temperature

T_J, (^OC)

T_RR

(nS)

V_RRM

(V)

V_R

(V)

V_F

(V)

V_RMS

SYMBOLS

(V)

*1 Repetitive peak reverse voltage

*2 RMS voltage

FFM101AG

FFM102AG

FFM103AG

100

200

400

100

200

400

150

140

280

*3 Continuous reverse voltage

1.30

-55 to +150

FFM104AG

*4 Maximum forward voltage@I_F=1.0A

600

420

560

700

600

250

500

FFM105AG

FFM106AG

FFM107AG

*5 Maximum Reverse recovery time, note 1

800

1000

=0.5A, I

Note 1. Reverse recovery time test condition, I

=1.0A, I^RR=0.25A

REV:1.0

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FFM101B	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Vo
FFM101BV-W	RECTRON	获取价格	SIGNAL DIODE,
FFM101FL	JINANJINGHENG	获取价格	FAST Recovery Rectifiers
FFM101L	WILLAS	获取价格	1.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
FFM101L	RECTRON	获取价格	SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Vo
FFM101-L	FORMOSA	获取价格	Chip Silicon Rectifier Fast recovery type
FFM101L-HF-T	RECTRON	获取价格	暂无描述
FFM101M	FRONTIER	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon,
FFM101-M	FORMOSA	获取价格	Fast recovery type
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