Datasheet > FFM101AFG

FFM101AFG

更新时间： 2024-11-20 00:59:15

品牌	Logo	应用领域
福斯特 - FIRST		/
页数	文件大小	规格书
3页	4119K
描述
Chip Silicon Rectifier

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中文翻译

获取价格

数据手册

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FFM101AFG 数据手册

FFM101AFG THRU FFM107AFG

Chip Silicon Rectifier

SMAF

1.0A Surface Mount Fast

Recovery Rectifiers-50-1000V

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

• High current capability.

• Fast switching for high efficiency.

1. Cathode

2. Anode

• High surge current capability.

• Glass passivated chip junction.

• Lead-free parts meet RoHS requirments.

Maximum ratings ^{(AT T}_A⁼²⁵^o^{C unless otherwise noted)}

MAX.

Symbol

I_O

UNIT

MIN.

TYP.

PARAMETER

CONDITIONS

Ambient temperature = 75^oC

1.0

Forward rectified current

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

I_FSM

Forward surge current

Reverse current

V_R= V_RRMT_J= 25^OC

5.0

I_R

μA

V_R= V_RRMT_J= 100^OC

Thermal resistance

Junction to ambient

R_θ

^OC/W

C_J

Diode junction capacitance

Storage temperature

f=1MHz and applied 4V DC reverse voltage

^OC

+150

-55

T_STG

Operating

temperature

T_J, (^OC)

T_RR

(nS)

V_RRM

(V)

V_R

(V)

V_F

(V)

V_RMS

SYMBOLS

(V)

*1 Repetitive peak reverse voltage

*2 RMS voltage

FFM101AFG

FFM102AFG

FFM103AFG

100

200

400

100

200

400

150

140

280

*3 Continuous reverse voltage

1.30

-55 to +150

FFM104AFG

*4 Maximum forward voltage@I_F=1.0A

600

420

560

700

600

250

500

FFM105AFG

FFM106AFG

FFM107AFG

*5 Maximum Reverse recovery time, note 1

800

1000

=0.5A, I

Note 1. Reverse recovery time test condition, I

=1.0A, I^RR=0.25A

REV:1.0

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@ 2018 Copyright By American First Semiconductor

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