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FFB2907A-F40 PDF预览

FFB2907A-F40

更新时间: 2024-10-15 14:42:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 88K
描述
Transistor

FFB2907A-F40 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):0.6 A最小直流电流增益 (hFE):100
最高工作温度:150 °C极性/信道类型:PNP
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

FFB2907A-F40 数据手册

 浏览型号FFB2907A-F40的Datasheet PDF文件第2页浏览型号FFB2907A-F40的Datasheet PDF文件第3页浏览型号FFB2907A-F40的Datasheet PDF文件第4页浏览型号FFB2907A-F40的Datasheet PDF文件第5页浏览型号FFB2907A-F40的Datasheet PDF文件第6页浏览型号FFB2907A-F40的Datasheet PDF文件第7页 
FMB2907A  
FFB2907A  
MMPQ2907A  
E2  
B2  
B4  
C2  
E1  
E4  
B3  
E3  
C1  
B2  
C1  
E2  
B1  
E1  
C4  
C4  
C2  
B2  
C3  
SC70-6  
B1  
E2  
C3  
C2  
pin #1  
Mark: .2F  
E1  
B1  
pin #1  
C2  
SOIC-16  
C1  
NOTE: The pinouts are symmetrical; pin 1 and pin  
4 are interchangeable. Units inside the carrier can  
be of either orientation and will not affect the  
functionality of the device.  
C1  
Mark:  
SuperSOT -6  
pin #1  
Mark: .2F  
MMPQ2907A  
Dot denotes pin #1  
PNP Multi-Chip General Purpose Amplifier  
This device is designed for use as a general purpose amplifier and switch requiring  
collector currents to 500 mA. Sourced from Process 63.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
60  
V
V
5.0  
V
4
Collector Current - Continuous  
600  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
FFB2907A  
FMB2907A  
MMPQ2907A  
PD  
RθJA  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Effective 4 Die  
300  
2.4  
415  
700  
5.6  
180  
1,000  
8.0  
mW  
mW/°C  
°C/W  
°C/W  
°C/W  
125  
240  
Each Die  
1998 Fairchild Semiconductor Corporation  

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