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FFB2227A PDF预览

FFB2227A

更新时间: 2024-11-18 22:31:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
3页 45K
描述
NPN & PNP General Purpose Amplifier

FFB2227A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:4.16
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:167268Samacsys Pin Count:6
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:P6X (SC70)Samacsys Released Date:2015-04-13 16:43:41
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:30 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):75JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signals表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

FFB2227A 数据手册

 浏览型号FFB2227A的Datasheet PDF文件第2页浏览型号FFB2227A的Datasheet PDF文件第3页 
FMB2227A  
FFB2227A  
E2  
C2  
E1  
B2  
TRANSISTOR TYPE  
C1  
C1 B1 E1  
C2 B2 E2  
NPN  
PNP  
C1  
C2  
SC70-6  
B2  
B1  
pin #1  
E2  
E1  
Mark: .AA  
SuperSOT -6  
B1  
pin #1  
Dot denotes pin #1  
Mark: .001  
Dot denotes pin #1  
NPN & PNP General Purpose Amplifier  
This complementary device is for use as a medium power amplifier and  
switch requiring collector currents up to 500 mA. Sourced from Process  
19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
30  
60  
V
V
5.0  
V
Collector Current - Continuous  
500  
mA  
4
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
FFB2227A  
FMB2227A  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
300  
2.4  
415  
700  
5.6  
180  
mW  
mW/°C  
°C/W  
RθJA  
1998 Fairchild Semiconductor Corporation  

FFB2227A 替代型号

型号 品牌 替代类型 描述 数据表
FFB2227A_NL FAIRCHILD

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