是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X11 | 针数: | 11 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.64 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 700 A |
集电极-发射极最大电压: | 600 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X11 |
元件数量: | 2 | 端子数量: | 11 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1650 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 805 ns | 标称接通时间 (ton): | 220 ns |
VCEsat-Max: | 1.9 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF600R06ME3BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 700A I(C), 600V V(BR)CES, N-Channel, MODULE-11 | |
FF600R07ME4 | INFINEON |
获取价格 |
Solder Pin | |
FF600R07ME4_B11 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 700A I(C), 650V V(BR)CES, N-Channel, MODULE-11 | |
FF600R07ME4B11BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 700A I(C), 650V V(BR)CES, N-Channel, MODULE-11 | |
FF600R12IE4 | INFINEON |
获取价格 |
PrimePACK™2 Modul mit Trench/Fieldstopp IGBT4 | |
FF600R12IE4BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF600R12IE4V | INFINEON |
获取价格 |
PrimePACK? 2 1200 V,600 A 半桥双 IGBT 模块专为 CAV 应 | |
FF600R12IE4VBOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10 | |
FF600R12IP4 | INFINEON |
获取价格 |
PrimePACK™2 Modul mit Trench/Fieldstopp IGBT4 | |
FF600R12IP4BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11 |