Datasheet > FF2400R12IP7

FF2400R12IP7

更新时间： 2024-11-06 17:01:59

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管二极管
页数	文件大小	规格书
15页	658K
描述
PrimePACK? 3+ 1200 V, 2400 A共集电极双IGBT模块，搭载TRENCHSTOP? IGBT7、带有发射极控制的第七代(EC7)二极管和热敏电阻（NTC），也可以提供预涂热界面材料（TIM）的版本。

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

FF2400R12IP7 数据手册

FF2400R12IP7

™

PrimePACK 3+ B-series module

™

PrimePACK 3+ B-series module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and NTC

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 2400 A / I_CRM= 4800 A

- High current density

- Low inductive design

- Low V_CE,sat

- T_vj,op= 150°C

- Overload operation up to 175°C

• Mechanical features

- 4 kV AC 1 min insulation

- High creepage and clearance distances

- High power density

Potential applications

• Motor drives

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2023-06-09

12 3 4 5 6 7...15

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
FF2400R12IP7P	INFINEON	获取价格	TIM
FF2400RB12IP7	INFINEON	获取价格	Common Collector module
FF2400RB12IP7P	INFINEON	获取价格	Common Collector module
FF2483E	ZETEX	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2483E	DIODES	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2483J	DIODES	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2484E	DIODES	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2484E	ZETEX	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2484J	ZETEX	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF25R06KF	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 600V V(BR)CES \| 25A I(C) \| M:HL080HD5.3