Datasheet > 晶体管 > IGBT> FF150R12MS4GENG

FF150R12MS4GENG

更新时间： 2024-01-17 19:26:42

品牌	Logo	应用领域
英飞凌 - INFINEON		开关双极性晶体管
页数	文件大小	规格书
8页	295K
描述
Insulated Gate Bipolar Transistor,

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技术参数
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FF150R12MS4GENG 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

FF150R12MS4GENG 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FF150R12MS4G

EconoDUAL™3 Modul mit schnellem IGBT2 für hochfrequentes Schalten

EconoDUAL™3 module with fast IGBT2 for high switching frequency

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1200

Kollektor-Dauergleichstrom

DC-collector current

T† = 75°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

150

225

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

300

1250

+/-20

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 150 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

3,20 3,70

3,85

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 6,00 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

4,5

5,5

1,60

1,7

6,5

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

11,0

0,50

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

I†Š»

I•Š»

tÁ ÓÒ

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

400 nA

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 150 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 7,5 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,10

0,11

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 150 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 7,5 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,06

0,07

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 150 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 7,5 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,53

0,55

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 150 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 7,5 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,03

0,04

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 150 A, V†Š = 600 V, L» = 80 nH

V•Š = ±15 V, di/dt = 2700 A/µs (TÝÎ=125°C) TÝÎ = 125°C

R•ÓÒ = 7,5 Â

TÝÎ = 25°C

9,00

14,5

EÓÒ

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 150 A, V†Š = 600 V, L» = 80 nH

V•Š = ±15 V, du/dt = 6500 V/µs (TÝÎ=125°C) TÝÎ = 125°C

R•ÓËË = 7,5 Â

TÝÎ = 25°C

8,00

11,0

EÓËË

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 900 V

I»†

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

pro IGBT / per IGBT

t« ù 10 µs, TÝÎ = 125°C

950

Innerer Wärmewiderstand

thermal resistance, junction to case

RÚÌœ†

RÚÌ†™

0,10 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

0,03

K/W

ð«ÈÙÚþ = 1 W/(m·K)

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: CU

approved by: MK

date of publication: 2011-03-01

revision: 2.1

12 3 4 5 6 7 8

中文翻译

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与FF150R12MS4GENG相关器件

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FF150R12MT4BOMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
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